CVD SiC Coating
Silicon carbide (SiC) epitaxy
The epitaxial tray, e nang le SiC substrate bakeng sa ho hōlisa SiC epitaxial slice, e behiloeng ka kamoreng ea karabelo 'me e kopana ka ho toba le sephaphatha.
![未标题-1 (2)](http://cdn.globalso.com/semi-cera/07cdb5073-300x300.png)
![Monocrystalline-silicon-epitaxial-sheet](http://cdn.globalso.com/semi-cera/Monocrystalline-silicon-epitaxial-sheet2-300x300.png)
Karolo e ka holimo ea halofo ea khoeli ke sesebelisoa sa lisebelisoa tse ling tsa kamore ea karabelo ea lisebelisoa tsa Sic epitaxy, ha karolo e ka tlase ea khoeli e hokahane le tube ea quartz, e hlahisang khase ho khanna setsi sa susceptor ho potoloha.li khona ho laola mocheso 'me li kenngoa ka kamoreng ea ho arabela ntle le ho kopana ka ho toba le sephaphatha.
![2ad467ac](http://cdn.globalso.com/semi-cera/2ad467ac2-300x300.png)
Ke epitaxy
![微信截图_20240226144819-1](http://cdn.globalso.com/semi-cera/4faff739-300x266.png)
Terei, e ts'oereng karoloana ea Si bakeng sa ho holisa selae sa Si epitaxial, se behiloe ka kamoreng ea karabelo 'me se hokahane ka kotloloho le sephaphatha.
![48b8fe3cb316186f7f1ef17c0b52be0b42c0add8](http://cdn.globalso.com/semi-cera/48b8fe3cb316186f7f1ef17c0b52be0b42c0add8-300x277.jpg)
Lesale la preheating le fumaneha ka ntle ho lesale la Si epitaxial substrate tray mme le sebelisetsoa ho lekanya le ho futhumatsa.E kenngoa ka kamoreng ea karabelo 'me ha e kopane ka ho toba le sephaphatha.
![微信截图_20240226152511](http://cdn.globalso.com/semi-cera/3f897fdd1-300x266.jpg)
Epitaxial susceptor, e ts'oereng karoloana ea Si bakeng sa ho holisa selae sa Si epitaxial, se behiloe ka phapusing ea karabelo mme se ikopanya ka kotloloho le sephaphatha.
![Moqomo oa Moqomo oa Liquid Phase Epitaxy(1)](http://cdn.globalso.com/semi-cera/Barrel-Susceptor-for-Liquid-Phase-Epitaxy1-300x266.png)
Epitaxial barrel ke likarolo tse ka sehloohong tse sebelisoang mekhoeng e sa tšoaneng ea tlhahiso ea semiconductor, e sebelisoang ka kakaretso lisebelisoa tsa MOCVD, tse nang le botsitso bo botle ba mocheso, lik'hemik'hale tse hanyetsanang le ho apara, tse loketseng haholo bakeng sa ho sebelisoa ha mocheso o phahameng.E kopana le liphaephe.
![微信截图_20240226160015(1)](http://cdn.globalso.com/semi-cera/46b89475.png)
重结晶碳化硅物理特性 Thepa ea 'mele ea Recrystallized Silicon Carbide | |
性质 / Thepa | 典型数值 / Tloaelehileng Value |
使用温度 / Mocheso oa ho sebetsa (°C) | 1600°C (ka oksijene), 1700°C (ho fokotsa tikoloho) |
SiC 含量 / SiC content | 99.96% |
自由 Si 含量 / Free Si content | <0.1% |
体积密度 / Bongata ba bongata | 2.60-2.70 g/cm3 |
气孔率 / Ho bonahala eka porosity | <16% |
抗压强度 / Matla a ho hatella | > 600 MPa |
常温抗弯强度 / Matla a ho kobeha a batang | 80-90 MPa (20°C) |
高温抗弯强度 Matla a ho kobeha a chesang | 90-100 MPa (1400°C) |
热膨胀系数 / Katoloso ea mocheso @1500°C | 4.70 10-6/°C |
导热系数 / Thermal conductivity @1200°C | 23 W/m•K |
杨氏模量 / Elastic modulus | 240 GPA |
抗热震性 / Thermal shock resistance | E ntle haholo |
烧结碳化硅物理特性 Thepa ea 'mele ea Sintered Silicon Carbide | |
性质 / Thepa | 典型数值 / Tloaelehileng Value |
化学成分 / Chemical Composition | SiC>95%, Si<5% |
体积密度 / Bulk Density | >3.07 g/cm³ |
显气孔率 / Apparent porosity | <0.1% |
常温抗弯强度 / Modulus of rupture at 20℃ | 270 MPa |
高温抗弯强度 / Modulus of rupture at 1200℃ | 290 MPa |
硬度 / Ho thatafala ho 20 ℃ | 2400 Kg/mm² |
断裂韧性 / Ho robeha ho thata ka 20% | 3.3 MPa · m1/2 |
导热系数 / Thermal Conductivity ho 1200℃ | 45 w/m .K |
热膨胀系数 / Katoloso ea mocheso ho 20-1200℃ | 4.5 1 ×10 -6/℃ |
最高工作温度 / Max.mocheso o sebetsang | 1400 ℃ |
热震稳定性 / Thermal shock resistance at 1200℃ | E ntle |
CVD SiC 薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa lifilimi tsa CVD SiC | |
性质 / Thepa | 典型数值 / Tloaelehileng Value |
晶体结构 / Crystal Structure | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
密度 / Density | 3.21 g/cm³ |
硬度 / Hardness 2500 | 维氏硬度 (500g mojaro) |
晶粒大小 / Grain SiZe | 2 ~ 10μm |
纯度 / Chemical Purity | 99.99995% |
热容 / Heat Capacity | 640 J·kg-1·K-1 |
升华温度 / Sublimation Mocheso | 2700 ℃ |
抗弯强度 / Flexural Strength | 415 MPa RT 4-ntlha |
杨氏模量 / Young's Modulus | 430 Gpa 4pt kobeha, 1300 ℃ |
导热系数 / Thermal Conductivity | 300Wm-1·K-1 |
热膨胀系数 / Thermal Expansion(CTE) | 4.5×10-6 K -1 |
Pyrolytic Carbon Coating
Lintlha tse ka sehloohong
Bokaholimo bo teteaneng ebile ha bo na masoba.
Bohloeki bo phahameng, litaba tse sa hloekang ka ho feletseng <20ppm, moea o motle.
Ho hanyetsa mocheso o phahameng, matla a eketseha ka mocheso o ntseng o eketseha oa tšebeliso, o fihla boleng bo phahameng ka ho fetisisa ho 2750 ℃, sublimation ho 3600 ℃.
Modulus e tlase ea elastic, conductivity e phahameng ea mocheso, coefficient e tlase ea katoloso ea mocheso, le khanyetso e ntle ea mocheso oa mocheso.
Botsitso bo botle ba lik'hemik'hale, bo hanyetsanang le asiti, alkali, letsoai le li-reagents tsa manyolo, 'me ha bo na phello holim'a tšepe e qhibilihisitsoeng, slag le mecha e meng e senyang.Ha e na oxidize haholo sepakapakeng se ka tlase ho 400 C, mme sekhahla sa oxidation se eketseha haholo ho 800 ℃.
Ntle le ho ntša khase efe kapa efe mochesong o phahameng, e ka boloka vacuum ea 10-7mmHg ho pota 1800°C.
Sesebelisoa sa sehlahisoa
Melting crucible bakeng sa mouoane indastering ea semiconductor.
Heke ea tube ea elektronike e matla.
Brush e hokahaneng le motlakase oa motlakase.
Graphite monochromator bakeng sa X-ray le neutron.
Libopeho tse fapaneng tsa graphite substrates le atomic absorption tube coating.
![微信截图_20240226161848](http://cdn.globalso.com/semi-cera/064df2af.jpg)
Pyrolytic carbon coating effect ka tlas'a microscope ea 500X, e nang le bokaholimo bo tiileng le bo tiisitsoeng.
CVD Tantalum Carbide Coating
Ho roala ha TaC ke thepa e hanyetsanang le mocheso o phahameng oa moloko o mocha, e nang le botsitso bo betere ba mocheso o phahameng ho feta SiC.E le seaparo se thibelang kutu, sekontiri se khahlanong le oxidation le seaparo se thibelang ho roala, se ka sebelisoa tikolohong e ka holimo ho 2000C, se sebelisoang haholo libakeng tse chesang tsa mocheso oa mocheso o phahameng oa mocheso, moloko oa boraro oa semiconductor e le 'ngoe ea kholo ea kristale masimo.
![Innovative tantalum carbide coating technology_ Ho thatafala ha thepa le ho hanyetsa mocheso o phahameng](http://cdn.globalso.com/semi-cera/Innovative-tantalum-carbide-coating-technology_-Enhanced-material-hardness-and-high-temperature-resistance-300x300.jpg)
![b917b6b4-7572-47fe-9074-24d33288257c](http://cdn.globalso.com/semi-cera/b917b6b4-7572-47fe-9074-24d33288257c-300x300.jpg)
![Antiwear tantalum carbide coating_ E sireletsa thepa hore e se ke ea senyeha le ho bola Setšoantšo se hlahang](http://cdn.globalso.com/semi-cera/Antiwear-tantalum-carbide-coating_-Protects-equipment-from-wear-and-corrosion-Featured-Image-300x300.jpg)
![3 (2)](http://cdn.globalso.com/semi-cera/3-2-300x300.png)
碳化钽涂层物理特性物理特性 Thepa ea TaC | |
密度/ Boetsuwa ba ho teteana | 14.3 (g/cm3) |
比辐射率 /Specific emissivity | 0.3 |
热膨胀系数/ Coefficient ya katoloso ya mocheso | 6.3 10/K |
努氏硬度 /Hardness (HK) | 2000 HK |
电阻/ Boetsuwa ba ho hanyetsa | 1x10-5 Ohm * cm |
热稳定性 /Thermal stability | <2500℃ |
石墨尺寸变化/Graphite boholo bo fetoha | -10 ~ 20um |
涂层厚度/ Botenya ba ho roala | ≥220um boleng bo tloaelehileng (35um±10um) |
Solid Silicon Carbide(CVD SiC)
Likarolo tse tiileng tsa CVD SILICON CARBIDE li amoheloa e le khetho ea mantlha bakeng sa mehele ea RTP/EPI le metheo le likarolo tsa plasma etch cavity tse sebetsang ka mocheso o phahameng o hlokahalang oa ho sebetsa (> 1500 ° C), litlhoko tsa bohloeki li phahame haholo (> 99.9995%) mme ts'ebetso e ntle haholo ha lik'hemik'hale tsa tol li phahame haholo.Lisebelisoa tsena ha li na mekhahlelo ea bobeli moeling oa lijo-thollo, kahoo likaroloana tsa theil li hlahisa likaroloana tse fokolang ho feta lisebelisoa tse ling.Ho phaella moo, likarolo tsena li ka hloekisoa ka ho sebelisa HF/HCI e chesang ka ho senyeha ho fokolang, ho fella ka likaroloana tse fokolang le bophelo bo bolelele ba tšebeletso.
![Setšoantšo sa 88](http://cdn.globalso.com/semi-cera/0cf0db64.png)
![121212](http://cdn.globalso.com/semi-cera/121212.png)