CVD SiC Coating
Silicon carbide (SiC) epitaxy
The epitaxial tray, e nang le SiC substrate bakeng sa ho hōlisa SiC epitaxial slice, e behiloeng ka kamoreng ea karabelo 'me e kopana ka ho toba le sephaphatha.
Karolo e ka holimo ea halofo ea khoeli ke sesebelisoa sa lisebelisoa tse ling tsa kamore ea karabelo ea lisebelisoa tsa Sic epitaxy, ha karolo e ka tlase ea khoeli e hokahane le tube ea quartz, e hlahisang khase ho khanna setsi sa susceptor ho potoloha.li khona ho laola mocheso 'me li kenngoa ka kamoreng ea ho arabela ntle le ho kopana ka ho toba le sephaphatha.
Ke epitaxy
Terei, e ts'oereng karoloana ea Si bakeng sa ho holisa selae sa Si epitaxial, se behiloe ka kamoreng ea karabelo 'me se hokahane ka kotloloho le sephaphatha.
Lesale la preheating le fumaneha ka ntle ho lesale la Si epitaxial substrate tray mme le sebelisetsoa ho lekanya le ho futhumatsa.E kenngoa ka kamoreng ea karabelo 'me ha e kopane ka ho toba le sephaphatha.
Epitaxial susceptor, e ts'oereng karoloana ea Si bakeng sa ho holisa selae sa Si epitaxial, se behiloe ka phapusing ea karabelo mme se ikopanya ka kotloloho le sephaphatha.
Epitaxial barrel ke likarolo tse ka sehloohong tse sebelisoang mekhoeng e sa tšoaneng ea tlhahiso ea semiconductor, e sebelisoang ka kakaretso lisebelisoa tsa MOCVD, tse nang le botsitso bo botle ba mocheso, lik'hemik'hale tse hanyetsanang le ho apara, tse loketseng haholo bakeng sa ho sebelisoa ha mocheso o phahameng.E kopana le liphaephe.
| 重结晶碳化硅物理特性 Thepa ea 'mele ea Recrystallized Silicon Carbide | |
| 性质 / Thepa | 典型数值 / Tloaelehileng Value |
| 使用温度 / Mocheso oa ho sebetsa (°C) | 1600°C (ka oksijene), 1700°C (ho fokotsa tikoloho) |
| SiC 含量 / SiC content | 99.96% |
| 自由 Si 含量 / Free Si content | <0.1% |
| 体积密度 / Bongata ba bongata | 2.60-2.70 g/cm3 |
| 气孔率 / Ho bonahala eka porosity | <16% |
| 抗压强度 / Matla a ho hatella | > 600 MPa |
| 常温抗弯强度 / Matla a ho kobeha a batang | 80-90 MPa (20°C) |
| 高温抗弯强度 Matla a ho kobeha a chesang | 90-100 MPa (1400°C) |
| 热膨胀系数 / Katoloso ea mocheso @1500°C | 4.70 10-6/°C |
| 导热系数 / Thermal conductivity @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modulus | 240 GPA |
| 抗热震性 / Thermal shock resistance | E ntle haholo |
| 烧结碳化硅物理特性 Thepa ea 'mele ea Sintered Silicon Carbide | |
| 性质 / Thepa | 典型数值 / Tloaelehileng Value |
| 化学成分 / Chemical Composition | SiC>95%, Si<5% |
| 体积密度 / Bulk Density | >3.07 g/cm³ |
| 显气孔率 / Apparent porosity | <0.1% |
| 常温抗弯强度 / Modulus of rupture at 20℃ | 270 MPa |
| 高温抗弯强度 / Modulus of rupture at 1200℃ | 290 MPa |
| 硬度 / Ho thatafala ho 20 ℃ | 2400 Kg/mm² |
| 断裂韧性 / Ho robeha ho thata ka 20% | 3.3 MPa · m1/2 |
| 导热系数 / Thermal Conductivity ho 1200℃ | 45 w/m .K |
| 热膨胀系数 / Katoloso ea mocheso ho 20-1200℃ | 4.5 1 ×10 -6/℃ |
| 最高工作温度 / Max.mocheso o sebetsang | 1400 ℃ |
| 热震稳定性 / Thermal shock resistance at 1200℃ | E ntle |
| CVD SiC 薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa lifilimi tsa CVD SiC | |
| 性质 / Thepa | 典型数值 / Tloaelehileng Value |
| 晶体结构 / Crystal Structure | FCC β phase polycrystalline, haholo-holo (111) e sekametseng |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Hardness 2500 | 维氏硬度 (500g mojaro) |
| 晶粒大小 / Grain SiZe | 2 ~ 10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Heat Capacity | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Mocheso | 2700 ℃ |
| 抗弯强度 / Flexural Strength | 415 MPa RT 4-ntlha |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt kobeha, 1300 ℃ |
| 导热系数 / Thermal Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Thermal Expansion(CTE) | 4.5×10-6 K -1 |
Pyrolytic Carbon Coating
Lintlha tse ka sehloohong
Bokaholimo bo teteaneng ebile ha bo na masoba.
Bohloeki bo phahameng, litaba tse sa hloekang ka ho feletseng <20ppm, moea o motle.
Ho hanyetsa mocheso o phahameng, matla a eketseha ka mocheso o ntseng o eketseha oa tšebeliso, o fihla boleng bo phahameng ka ho fetisisa ho 2750 ℃, sublimation ho 3600 ℃.
Modulus e tlase ea elastic, conductivity e phahameng ea mocheso, coefficient e tlase ea katoloso ea mocheso, le khanyetso e ntle ea mocheso oa mocheso.
Botsitso bo botle ba lik'hemik'hale, bo hanyetsanang le asiti, alkali, letsoai le li-reagents tsa manyolo, 'me ha bo na phello holim'a tšepe e qhibilihisitsoeng, slag le mecha e meng e senyang.Ha e na oxidize haholo sepakapakeng se ka tlase ho 400 C, mme sekhahla sa oxidation se eketseha haholo ho 800 ℃.
Ntle le ho ntša khase efe kapa efe mochesong o phahameng, e ka boloka vacuum ea 10-7mmHg ho pota 1800°C.
Sesebelisoa sa sehlahisoa
Melting crucible bakeng sa mouoane indastering ea semiconductor.
Heke ea tube ea elektronike e matla.
Brush e hokahaneng le motlakase oa motlakase.
Graphite monochromator bakeng sa X-ray le neutron.
Libopeho tse fapaneng tsa graphite substrates le atomic absorption tube coating.
Pyrolytic carbon coating effect ka tlas'a microscope ea 500X, e nang le bokaholimo bo tiileng le bo tiisitsoeng.
CVD Tantalum Carbide Coating
Ho roala ha TaC ke thepa e hanyetsanang le mocheso o phahameng oa moloko o mocha, e nang le botsitso bo betere ba mocheso o phahameng ho feta SiC.E le seaparo se thibelang kutu, sekontiri se khahlanong le oxidation le seaparo se thibelang ho roala, se ka sebelisoa tikolohong e ka holimo ho 2000C, se sebelisoang haholo libakeng tse chesang tsa mocheso oa mocheso o phahameng oa mocheso, moloko oa boraro oa semiconductor e le 'ngoe ea kholo ea kristale masimo.
| 碳化钽涂层物理特性物理特性 Thepa ea TaC | |
| 密度/ Boetsuwa ba ho teteana | 14.3 (g/cm3) |
| 比辐射率 /Specific emissivity | 0.3 |
| 热膨胀系数/ Coefficient ya katoloso ya mocheso | 6.3 10/K |
| 努氏硬度 /Hardness (HK) | 2000 HK |
| 电阻/ Boetsuwa ba ho hanyetsa | 1x10-5 Ohm * cm |
| 热稳定性 /Thermal stability | <2500℃ |
| 石墨尺寸变化/Graphite boholo bo fetoha | -10 ~ 20um |
| 涂层厚度/ Botenya ba ho roala | ≥220um boleng bo tloaelehileng (35um±10um) |
Solid Silicon Carbide(CVD SiC)
Likarolo tse tiileng tsa CVD SILICON CARBIDE li amoheloa e le khetho ea mantlha bakeng sa mehele ea RTP/EPI le metheo le likarolo tsa plasma etch cavity tse sebetsang ka mocheso o phahameng o hlokahalang oa ho sebetsa (> 1500 ° C), litlhoko tsa bohloeki li phahame haholo (> 99.9995%) mme ts'ebetso e ntle haholo ha lik'hemik'hale tsa tol li phahame haholo.Lisebelisoa tsena ha li na mekhahlelo ea bobeli moeling oa lijo-thollo, kahoo likaroloana tsa theil li hlahisa likaroloana tse fokolang ho feta lisebelisoa tse ling.Ho phaella moo, likarolo tsena li ka hloekisoa ka ho sebelisa HF/HCI e chesang ka ho senyeha ho fokolang, ho fella ka likaroloana tse fokolang le bophelo bo bolelele ba tšebeletso.
