Nts'etsopele le Ts'ebeliso ea Silicon Carbide (SiC)
1. Lilemo Tse Lekholo Tsa Boqapi ho SiC
Leeto la silicon carbide (SiC) le qalile ka 1893, ha Edward Goodrich Acheson a theha sebōpi sa Acheson, a sebelisa lisebelisoa tsa carbon ho finyella tlhahiso ea indasteri ea SiC ka ho futhumatsa motlakase oa quartz le carbon. Tlhahiso ena e ile ea tšoaea ho qaleha ha indasteri ea SiC 'me ea etsa hore Acheson e be le tokelo ea molao.
Mathoasong a lekholo la bo20 la lilemo, SiC e ne e sebelisoa haholo-holo e le ntho e senyang ka lebaka la ho thatafala ha eona le ho hanyetsa ho apara. Bohareng ba lekholo la bo20 la lilemo, tsoelo-pele ea theknoloji ea "chemical vapor deposition" (CVD) e ile ea bula menyetla e mecha. Bafuputsi ba Bell Labs, ba etelletsoeng pele ke Rustum Roy, ba ile ba rala motheo bakeng sa CVD SiC, ho finyella liaparo tsa pele tsa SiC holim'a libaka tsa graphite.
Lilemong tsa bo-1970 ho bile le katleho e kholo ha Union Carbide Corporation e sebelisa graphite e koahetsoeng ke SiC kholong ea epitaxial ea thepa ea semiconductor ea gallium nitride (GaN). Tsoelo-pele ena e phethile karolo ea bohlokoa ho li-LED le li-laser tse sebetsang hantle haholo tse thehiloeng ho GaN. Ho theosa le mashome a lilemo, liphahlo tsa SiC li atolohile ho feta li-semiconductors ho isa lits'ebetsong tsa aerospace, likoloi, le lisebelisoa tsa motlakase tsa motlakase, ka lebaka la ntlafatso ea mekhoa ea tlhahiso.
Kajeno, mekhoa e mecha e kang ho fafatsa ka mocheso, PVD, le nanotechnology e ntse e ntlafatsa ts'ebetso le ts'ebeliso ea liphahlo tsa SiC, e bonts'a bokhoni ba eona masimong a hloahloa.
2. Ho Utloisisa Mehaho le Tšebeliso ea SiC ea Crystal
SiC e ithorisa ka li-polytypes tse fetang 200, tse arotsoeng ka tlhophiso ea tsona ea liathomo ka li-cubic (3C), li-hexagonal (H), le rhombohedral (R). Har'a tsena, 4H-SiC le 6H-SiC li sebelisoa haholo ka lisebelisoa tse matla le tsa optoelectronic, ka ho latellana, ha β-SiC e nkoa e le ea bohlokoa bakeng sa conductivity ea eona e phahameng ea mocheso, ho hanyetsa ho apara le ho hanyetsa kutu.
β-SiC'sthepa e ikhethang, tse kang mogote conductivity ea120-200 W/m·Kle coefficient ea ho atolosa mocheso e ts'oanang hantle le graphite, e etsa hore e be thepa e ratoang bakeng sa ho roala ka holim'a thepa ea wafer epitaxy.
3. Liaparo tsa SiC: Thepa le Mekhoa ea Boitokisetso
Liaparo tsa SiC, tseo hangata li leng β-SiC, li sebelisoa haholo ho ntlafatsa thepa ea holim'a metsi joaloka ho thatafala, ho hanyetsa ho apara, le botsitso ba mocheso. Mekhoa e tloaelehileng ea ho lokisa e kenyelletsa:
- Kemiso ea Mouoane oa Lik'hemik'hale (CVD):E fana ka liphahlo tsa boleng bo holimo tse nang le sekhomaretsi se setle le se ts'oanang, se loketseng li-substrates tse kholo le tse rarahaneng.
- Phahamiso ea Mouoane 'meleng (PVD):E fana ka taolo e nepahetseng holim'a sebopeho sa ho roala, se loketseng lits'ebetso tse nepahetseng haholo.
- Mekhoa ea ho fafatsa, ho beoa ha Electrochemical, le Coating ea Slurry: Sebeletsa e le mefuta e meng e bolokang chelete e ngata bakeng sa lits'ebetso tse ikhethileng, leha ho na le meeli e fapaneng ea ho khomarela le ho ts'oana.
Mokhoa o mong le o mong o khethoa ho latela litšobotsi tsa substrate le litlhoko tsa ts'ebeliso.
4. SiC-Coated Graphite Susceptors ho MOCVD
Li-susceptors tsa graphite tse koahetsoeng ke SiC li bohlokoa haholo ho Metal Organic Chemical Vapor Deposition (MOCVD), ts'ebetso ea bohlokoa tlhahisong ea lisebelisoa tsa semiconductor le optoelectronic.
Li-susceptors tsena li fana ka tšehetso e matla bakeng sa kholo ea filimi ea epitaxial, ho netefatsa botsitso ba mocheso le ho fokotsa tšilafalo ea litšila. Ho roala ha SiC ho boetse ho ntlafatsa khanyetso ea oxidation, thepa ea holim'a metsi, le boleng ba sebopeho, e leng ho nolofalletsang taolo e nepahetseng nakong ea kholo ea filimi.
5. Ho Hatela Pele ho Bokamoso
Lilemong tsa morao tjena, boiteko bo matla bo lebisitsoe ho ntlafatsa mekhoa ea tlhahiso ea li-graphite substrates tsa SiC-coated. Bafuputsi ba tsepamisitse maikutlo ho ntlafatseng bohloeki ba ho koahela, ho ts'oana le nako ea bophelo ha ba ntse ba fokotsa litšenyehelo. Ho feta moo, ho hlahlojoa ha lisebelisoa tse ncha tse kanglitlolo tsa tantalum carbide (TaC).e fana ka lintlafatso tse ka bang teng ho conductivity ea mocheso le ho hanyetsa ho bola, ho bula tsela bakeng sa tharollo ea moloko o latelang.
Ha tlhoko ea li-graphite susceptors tse koahetsoeng ke SiC e ntse e hola, tsoelo-pele ea tlhahiso e bohlale le tlhahiso ea indasteri e tla ts'ehetsa nts'etsopele ea lihlahisoa tsa boleng bo holimo ho fihlela litlhoko tse ntseng li tsoela pele tsa indasteri ea semiconductor le optoelectronics.
Nako ea poso: Nov-24-2023