Khōlo ea Epitaxial ke theknoloji e hōlisang lesela le le leng la kristale holim'a substrate e le 'ngoe ea kristale (substrate) e nang le mokhoa o tšoanang oa kristale joaloka substrate, joalokaha eka kristale ea pele e atolohile ka ntle.Lera lena le sa tsoa hōla le le leng la kristale le ka fapana le substrate ho latela mofuta oa conductivity, resistivity, joalo-joalo, 'me le ka hōlisa likristale tse ngata tse nang le mefuta e mengata e nang le botenya bo fapaneng le litlhoko tse fapaneng, kahoo ho ntlafatsa haholo ho feto-fetoha ha moralo oa lisebelisoa le ts'ebetso ea lisebelisoa.Ho phaella moo, mokhoa oa epitaxial o boetse o sebelisoa haholo ho theknoloji ea ho itšehla thajana ea PN ho lipotoloho tse kopantsoeng le ho ntlafatsa boleng ba thepa ka lipotoloho tse kholo tse kopantsoeng.
Ho hlophisoa ha epitaxy ho thehiloe haholo-holo ho lihlopha tse fapaneng tsa lik'hemik'hale tsa substrate le epitaxial layer le mekhoa e fapaneng ea ho hōla.
Ho ea ka lihlopha tse fapaneng tsa lik'hemik'hale, kholo ea epitaxial e ka aroloa ka mefuta e 'meli:
1. Homoepitaxial: Tabeng ena, epitaxial layer e na le lik'hemik'hale tse tšoanang le tsa substrate.Mohlala, silicon epitaxial layers e holisoa ka kotloloho holim'a silicon substrates.
2. Heteroepitaxy: Mona, metsoako ea lik'hemik'hale ea epitaxial layer e fapane le ea substrate.Ka mohlala, gallium nitride epitaxial layer e lengoa holim'a sapphire substrate.
Ho latela mekhoa e fapaneng ea kholo, theknoloji ea kholo ea epitaxial e ka aroloa ka mefuta e fapaneng:
1. Molecular beam epitaxy (MBE): Ena ke thekenoloji ea ho hōlisa lifilimi tse tšesaane tsa kristale e le 'ngoe holim'a li-substrates tsa kristale e le' ngoe, e finyelloang ka ho laola ka mokhoa o nepahetseng sekhahla sa phallo ea molek'hule le ho teteka ha mahlaseli ka har'a vacuum e phahameng haholo.
2. Metal-organic chemical vapor deposition (MOCVD): Theknoloji ena e sebelisa metsoako ea tšepe-organic le li-reagents tsa khase ho etsa lik'hemik'hale tsa lik'hemik'hale ka mocheso o phahameng ho hlahisa thepa e hlokahalang ea filimi.E na le ts'ebeliso e pharalletseng ha ho lokisoa lisebelisoa le lisebelisoa tse kopaneng tsa semiconductor.
3. Liquid phase epitaxy (LPE): Ka ho eketsa lisebelisoa tsa metsi ho substrate e le 'ngoe ea kristale le ho etsa phekolo ea mocheso ka mocheso o itseng, thepa ea mokelikeli e khanyang ho etsa filimi e le' ngoe ea kristale.Lifilimi tse lokiselitsoeng ke thekenoloji ena li tsamaisana le lattice ho substrate 'me hangata li sebelisetsoa ho lokisetsa lisebelisoa le lisebelisoa tsa metsoako ea semiconductor.
4. Vapor phase epitaxy (VPE): E sebelisa li-reactants tsa gaseous ho etsa lik'hemik'hale tsa lik'hemik'hale ka mocheso o phahameng ho hlahisa lisebelisoa tse hlokahalang tsa filimi.Theknoloji ena e loketse ho lokisetsa lifilimi tsa kristale tse nang le sebaka se seholo, tsa boleng bo phahameng, 'me e ipabola ka ho khetheha ho lokiseng lisebelisoa le lisebelisoa tsa metsoako ea semiconductor.
5. Chemical beam epitaxy (CBE): Theknoloji ena e sebelisa mahlaseli a lik'hemik'hale ho hōlisa lifilimi tse le 'ngoe tsa kristale holim'a li-substrates tse le' ngoe tsa kristale, tse finyelloang ka ho laola ka mokhoa o nepahetseng tekanyo ea phallo ea lik'hemik'hale le sekhahla sa mahlaseli.E na le lisebelisoa tse pharaletseng ho lokiseng lifilimi tse tšesaane tsa kristale tsa boleng bo holimo.
6. Atomic layer epitaxy (ALE): Ho sebelisa theknoloji ea deposition layer ea atomic, thepa e hlokahalang ea filimi e tšesaane e kenngoa ka lera holim'a substrate e le 'ngoe ea kristale.Theknoloji ena e ka lokisa sebaka se seholo, lifilimi tsa boleng bo phahameng ba kristale e le 'ngoe' me hangata e sebelisoa ho lokisetsa lisebelisoa le lisebelisoa tsa semiconductor tse kopantsoeng.
7. Hot wall epitaxy (HWE): Ka ho futhumatsa mocheso o phahameng, li-reactants tsa gaseous li kenngoa holim'a substrate e le 'ngoe ea kristale ho etsa filimi e le' ngoe ea kristale.Theknoloji ena e boetse e loketse ho lokisetsa lifilimi tsa kristale tse nang le sebaka se seholo, tsa boleng bo phahameng, 'me e sebelisoa ka ho khetheha ho lokiseng lisebelisoa le lisebelisoa tsa semiconductor.
Nako ea poso: May-06-2024