Litaba tsa indasteri

  • Lisebelisoa tsa mantlha tsa kholo ea SiC: Tantalum carbide coating

    Lisebelisoa tsa mantlha tsa kholo ea SiC: Tantalum carbide coating

    Hona joale, moloko oa boraro oa li-semiconductors o laoloa ke silicon carbide. Sebopeho sa litšenyehelo tsa lisebelisoa tsa eona, substrate e ikarabella bakeng sa 47%, 'me epitaxy e nka 23%. Tse peli hammoho li etsa karolo ea 70%, e leng karolo ea bohlokoa ka ho fetisisa ea silicon carbide device manufa ...
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  • Lihlahisoa tse koahetsoeng ka tantalum carbide li ntlafatsa ho hanyetsa ho bola ha thepa joang?

    Lihlahisoa tse koahetsoeng ka tantalum carbide li ntlafatsa ho hanyetsa ho bola ha thepa joang?

    Tantalum carbide coating ke theknoloji e sebelisoang hangata ea kalafo ea holim'a metsi e ka ntlafatsang haholo ho hanyetsa ho bola ha thepa. Tantalum carbide coat e ka hokelloa holim'a substrate ka mekhoa e fapaneng ea ho itokisa, joalo ka deposition ea mouoane oa lik'hemik'hale, physica ...
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  • Maobane, Boto ea Boqapi ba Saense le Theknoloji e fane ka tsebiso ea hore Huazhuo Precision Technology e felisitse IPO ea eona!

    E sa tsoa phatlalatsa ho tlisoa ha thepa ea pele ea 8-inch SIC laser annealing China, eo hape e leng theknoloji ea Tsinghua; Ke hobane'ng ha ba ile ba hula thepa ka bobona? Mantsoe a seng makae feela: Pele, lihlahisoa li fapane haholo! Ha ke habanya mahlo feela, ha ke tsebe seo ba se etsang. Hajoale, H...
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  • CVD silicon carbide coating-2

    CVD silicon carbide coating-2

    CVD silicon carbide coating 1. Ke hobane'ng ha ho e-na le lesela la silicon carbide The epitaxial layer ke filimi e khethehileng e le 'ngoe e tšesaane ea kristale e hōlileng motheong oa sephaphatha ka mokhoa oa epitaxial. The substrate wafer le filimi e tšesaane ea epitaxial ka kakaretso e bitsoa epitaxial wafers. Har'a bona, ...
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  • Mokhoa oa ho itokisa oa ho roala SIC

    Mokhoa oa ho itokisa oa ho roala SIC

    Hona joale, mekhoa ea ho lokisa ea ho roala ha SiC haholo-holo e kenyelletsa mokhoa oa gel-sol, mokhoa oa ho kenya, mokhoa oa ho roala borashe, mokhoa oa ho fafatsa ka plasma, mokhoa oa lik'hemik'hale oa mouoane (CVR) le mokhoa oa ho beha mouoane oa lik'hemik'hale (CVD). Mokhoa oa ho kenya mokhoa ona ke mofuta oa boemo bo tiileng ba mocheso o phahameng...
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  • CVD Silicon Carbide Coating-1

    CVD Silicon Carbide Coating-1

    CVD SiC Chemical vapor deposition (CVD) ke eng ke ts'ebetso ea vacuum deposition e sebelisoang ho hlahisa lisebelisoa tse tiileng tse hloekileng. Ts'ebetso ena e atisa ho sebelisoa tšimong ea tlhahiso ea semiconductor ho etsa lifilimi tse tšesaane holim'a li-wafers. Ts'ebetsong ea ho lokisa SiC ka CVD, substrate e felile ...
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  • Tlhahlobo ea sebopeho sa dislocation ho SiC kristale ka ray tracing simulation ka thuso ea X-ray topological imaging.

    Tlhahlobo ea sebopeho sa dislocation ho SiC kristale ka ray tracing simulation ka thuso ea X-ray topological imaging.

    Semelo sa lipatlisiso Bohlokoa ba ts'ebeliso ea silicon carbide (SiC): Joalo ka semiconductor ea semiconductor e pharaletseng, silicon carbide e hohetse tlhokomelo e kholo ka lebaka la thepa ea eona e ntle ea motlakase (joalo ka bandgap e kholoanyane, lebelo le phahameng la electron saturation le thermal conductivity). Lisebelisoa tsena ...
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  • Ts'ebetso ea ho lokisa kristale ea peo ho SiC e le 'ngoe ea kholo ea kristale 3

    Ts'ebetso ea ho lokisa kristale ea peo ho SiC e le 'ngoe ea kholo ea kristale 3

    Netefatso ea KhōloLikristale tsa peo tsa silicon carbide (SiC) li ile tsa lokisoa ka mor'a ts'ebetso e hlalositsoeng 'me tsa netefatsoa ka kholo ea kristale ea SiC. Sethala sa kholo se sebelisitsoeng e ne e le sebōpi se ikemetseng sa SiC se nang le mocheso oa kholo ea 2200 ℃, khatello ea kholo ea 200 Pa, le kholo ...
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  • Seed Crystal Preparation process in SiC Single Crystal Growth (Karolo ea 2)

    Seed Crystal Preparation process in SiC Single Crystal Growth (Karolo ea 2)

    2. Ts'ebetso ea Teko 2.1 Ho Fokotsa Filimi ea Likhomaretsi Ho ile ha hlokomeloa hore ho theha filimi ea carbon ka ho toba kapa ho tlamahane ka pampiri ea graphite holim'a li-wafers tsa SiC tse koahetsoeng ka sekhomaretsi ho ile ha lebisa litabeng tse 'maloa: 1. Tlas'a maemo a vacuum, filimi e khomarelang holim'a li-wafers tsa SiC e ile ea hlahisa ponahalo e lekanang le tekanyo. ho saena...
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  • Seed Crystal Preparation Process in SiC Single Crystal Growth

    Seed Crystal Preparation Process in SiC Single Crystal Growth

    Silicon carbide (SiC) thepa e na le melemo ea ho ba le lekhalo le pharaletseng, ts'ebetso e phahameng ea mocheso, matla a maholo a ho senyeha ha tšimo, le lebelo le phahameng la ho hoholeha ha elektronike, e leng se etsang hore e be e tšepisang haholo lefapheng la tlhahiso ea semiconductor. Likristale tse le 'ngoe tsa SiC hangata li hlahisoa ka ...
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  • Mekhoa ea ho bentša liphaephe ke efe?

    Mekhoa ea ho bentša liphaephe ke efe?

    Har'a lits'ebetso tsohle tse amehang ho bopeng chip, pheletso ea ho qetela ea sephaphatha ke ho khaoloa ho motho ka mong ebe o kenngoa ka mabokoseng a manyane, a koetsoeng a pepesitsoe lithakhisa tse 'maloa feela. Chip e tla hlahlojoa ho ipapisitsoe le moeli oa eona, khanyetso, boleng ba hona joale le matla a motlakase, empa ha ho motho ea tla e nka ...
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  • Kenyelletso ea Motheo ea SiC Epitaxial Growth Process

    Kenyelletso ea Motheo ea SiC Epitaxial Growth Process

    Epitaxial layer ke filimi e khethehileng ea kristale e le 'ngoe e hōlileng holim'a sephaphatha ka mokhoa oa ep·itaxial,' me substrate wafer le filimi ea epitaxial e bitsoa epitaxial wafer. Ka ho holisa silicon carbide epitaxial layer ho conductive silicon carbide substrate, silicon carbide homogeneous epitaxial ...
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