Silicon nitride e kopantsoeng le poleiti ea silicon carbide

Silicon nitride bonded silicon carbide plate Featured Image

Tlhaloso e Khutšoanyane:

Si3N4 bonded SiC as a new type refractory material,e sebediswa ka bophara.Mocheso o sebediswang ke 1400 C.E na le botsitso bo betere ba mocheso,ho sisinyeha ha mocheso,e leng molemo ho feta plain refractory material.E boetse e na le anti-oxidation, high corrosion resistance, wear-resistance, high coloble strength.E ka hanela ho bola le ho hoholoa, e se ke ea e-ba le mocheso o silafetseng le o potlakileng ka tšepe e qhibilihisitsoeng e kang AL,Pb,Zn,Cu ect.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon nitride e kopantsoeng le silicon carbide

Si3N4 e kopantsoeng le SiC ceramic refractory material, e kopantsoe le phofo e ntle e phahameng ea SIC le phofo ea Silicon, ka mor'a mokhoa oa ho lahla, karabelo e sintered tlas'a 1400 ~ 1500 ° C.Nakong ea thupelo, ho tlatsa naetrojene e hloekileng ka har'a sebōpi, ebe silicon e tla itšoara ka Nitrogen ebe e hlahisa Si3N4, So Si3N4 bonded SiC material e entsoe ka silicon nitride (23%) le silicon carbide (75%) e le lisebelisoa tse ka sehloohong tse tala. , e kopantsoeng le lintho tse phelang, 'me e bōpehile ka motsoako, extrusion kapa ho tšela, ebe e etsoa ka mor'a ho omisa le nitrogenization.

Likarolo le melemo:

1.Hho mamella mocheso
2.High conductivity ea mocheso le ho hanyetsa ho tsosoa
3.Matla a phahameng a mechine le ho hanyetsa abrasion
4.Botle ba matla a matla le ho hanyetsa kutu

Re fana ka lisebelisoa tsa ceramic tsa boleng bo holimo le tse nepahetseng tsa NSiC tse sebetsang ka ho

1.Slip casting
2.Ho ntša
3.Uni Axial Pressing
4.Isostatic Pressing

Lethathamo la Boitsebiso

> Sebopeho sa Lik'hemik'hale	Sic	75%
	Si3N4	≥23%
	Free Si	0%
Boima ba bongata (g/cm3)		2.70～2.80
Ho bonahala porosity (%)		12～15
Matla a kobeha ho 20 ℃(MPa)		180～190
Matla a kobeha ho 1200 ℃(MPa)		207
Matla a kobeha ho 1350 ℃(MPa)		210
Matla a hatellang ho 20 ℃(MPa)		580
Thermal conductivity ho 1200 ℃(w/mk)		19.6
Katoloso ea coefficient ea mocheso ho1200 ℃(x 10-6/C)		4.70
Ho hanyetsa mocheso oa mocheso		E kgabane
Max.mocheso (℃)		1600

Silicon nitride bonded silicon carbide plate1

Silicon nitride e kopantsoeng le poleiti ea silicon carbide

WeiTai Energy Technology Co., Ltd. ke mofani oa thepa ea ka sehloohong oa li-ceramics tse tsoetseng pele tsa semiconductor le moetsi feela Chaena ea ka fanang ka lisebelisoa tse phahameng tsa silicon carbide ceramic (haholo-holo Recrystallized SiC) le CVD SiC coating.Ho feta moo, k'hamphani ea rona e boetse e ikemiselitse ho etsa masimo a ceramic a kang alumina, aluminium nitride, zirconia, le silicon nitride, joalo-joalo.

Lihlahisoa tsa rona tsa mantlha li kenyelletsa: silicon carbide etching disc, silicon carbide boat tow, silicon carbide wafer boat (Photovoltaic&Semiconductor), silicon carbide furnace tube, silicon carbide cantilever paddle, silicon carbide chucks, silicon carbide beam, hammoho le CVD SiC coating le TaC. ho roala.Lihlahisoa tse sebelisoang haholo indastering ea semiconductor le photovoltaic, joalo ka lisebelisoa tsa kholo ea kristale, epitaxy, etching, ho paka, ho roala le libono tsa phallo, jj.

Khampani ea rona e na le lisebelisoa tse feletseng tsa tlhahiso tse kang ho bōpa, ho etsa sintering, ho sebetsa, lisebelisoa tsa ho roala, joalo-joalo, tse ka tlatsang lihokelo tsohle tse hlokahalang tsa tlhahiso ea lihlahisoa le ho ba le taolo e phahameng ea boleng ba sehlahisoa;Morero o nepahetseng oa tlhahiso o ka khethoa ho ea ka litlhoko tsa sehlahisoa, ho fella ka theko e tlaase le ho fa bareki lihlahisoa tse ngata tsa tlhōlisano;Re ka khona ho hlophisa tlhahiso ka mokhoa o bonolo le ka katleho ho latela litlhoko tsa ho fana ka taelo le ka kopanelo le litsamaiso tsa taolo ea odara ea inthaneteng, ho fa bareki nako e potlakileng le e netefalitsoeng ea ho fana ka nako.