Silicon nitride e kopantsoeng le silicon carbide square beam

Tlhaloso e Khutšoanyane:

Si3N4 bonded SiC as a new type refractory material,e sebediswa ka bophara.Mocheso o sebediswang ke 1400 C.E na le botsitso bo betere ba mocheso,ho sisinyeha ha mocheso,e leng molemo ho feta plain refractory material.E boetse e na le anti-oxidation, high corrosion resistance, wear-resistance, high coloble strength.E ka hanela ho bola le ho hoholoa, e se ke ea e-ba le mocheso o silafetseng le o potlakileng ka tšepe e qhibilihisitsoeng e kang AL,Pb,Zn,Cu ect.


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描述

Silicon nitride e kopantsoeng le silicon carbide

Si3N4 e kopantsoeng le SiC ceramic refractory material, e kopantsoe le phofo e ntle e phahameng ea SIC le phofo ea Silicon, ka mor'a mokhoa oa ho lahla, karabelo e sintered tlas'a 1400 ~ 1500 ° C.Nakong ea thupelo, ho tlatsa naetrojene e hloekileng ka har'a sebōpi, ebe silicon e tla itšoara ka Nitrogen ebe e hlahisa Si3N4, So Si3N4 bonded SiC material e entsoe ka silicon nitride (23%) le silicon carbide (75%) e le lisebelisoa tse ka sehloohong tse tala. , e kopantsoeng le lintho tse phelang, 'me e bōpehile ka motsoako, extrusion kapa ho tšela, ebe e etsoa ka mor'a ho omisa le nitrogenization.

 

特点

Likarolo le melemo:

1.Hho mamella mocheso
2.High conductivity ea mocheso le ho hanyetsa ho tsosoa
3.Matla a phahameng a mechine le ho hanyetsa abrasion
4.Botle ba matla a matla le ho hanyetsa kutu

Re fana ka lisebelisoa tsa ceramic tsa boleng bo holimo le tse nepahetseng tsa NSiC tse sebetsang ka ho

1.Slip casting
2.Ho ntša
3.Uni Axial Pressing
4.Isostatic Pressing

Lethathamo la Boitsebiso

> Sebopeho sa Lik'hemik'hale Sic 75%
Si3N4 ≥23%
Free Si 0%
Boima ba bongata (g/cm3) 2.702.80
Ho bonahala porosity (%) 1215
Matla a kobeha ho 20 ℃(MPa) 180190
Matla a kobeha ho 1200 ℃(MPa) 207
Matla a kobeha ho 1350 ℃(MPa) 210
Matla a hatellang ho 20 ℃(MPa) 580
Thermal conductivity ho 1200 ℃(w/mk) 19.6
Katoloso ea coefficient ea mocheso ho1200 ℃(x 10-6/C) 4.70
Ho hanyetsa mocheso oa mocheso E kgabane
Max.mocheso (℃) 1600
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