Silicon nitride e kopantsoeng le silicon carbide
Si3N4 e kopantsoeng le SiC ceramic refractory material, e kopantsoe le phofo e ntle e phahameng ea SIC le phofo ea Silicon, ka mor'a mokhoa oa ho lahla, karabelo e sintered tlas'a 1400 ~ 1500 ° C.Nakong ea thupelo, ho tlatsa naetrojene e hloekileng ka har'a sebōpi, ebe silicon e tla itšoara ka Nitrogen ebe e hlahisa Si3N4, So Si3N4 bonded SiC material e entsoe ka silicon nitride (23%) le silicon carbide (75%) e le lisebelisoa tse ka sehloohong tse tala. , e kopantsoeng le lintho tse phelang, 'me e bōpehile ka motsoako, extrusion kapa ho tšela, ebe e etsoa ka mor'a ho omisa le nitrogenization.
Likarolo le melemo:
1.Hho mamella mocheso
2.High conductivity ea mocheso le ho hanyetsa ho tsosoa
3.Matla a phahameng a mechine le ho hanyetsa abrasion
4.Botle ba matla a matla le ho hanyetsa kutu
Re fana ka lisebelisoa tsa ceramic tsa boleng bo holimo le tse nepahetseng tsa NSiC tse sebetsang ka ho
1.Slip casting
2.Ho ntša
3.Uni Axial Pressing
4.Isostatic Pressing
Lethathamo la Boitsebiso
> Sebopeho sa Lik'hemik'hale | Sic | 75% |
Si3N4 | ≥23% | |
Free Si | 0% | |
Boima ba bongata (g/cm3) | 2.70~2.80 | |
Ho bonahala porosity (%) | 12~15 | |
Matla a kobeha ho 20 ℃(MPa) | 180~190 | |
Matla a kobeha ho 1200 ℃(MPa) | 207 | |
Matla a kobeha ho 1350 ℃(MPa) | 210 | |
Matla a hatellang ho 20 ℃(MPa) | 580 | |
Thermal conductivity ho 1200 ℃(w/mk) | 19.6 | |
Katoloso ea coefficient ea mocheso ho1200 ℃(x 10-6/C) | 4.70 | |
Ho hanyetsa mocheso oa mocheso | E kgabane | |
Max.mocheso (℃) | 1600 |