Lintho tsa Ceramic semiconductor

Semiconductor zirconia ceramics

Likaroloana:

The resistivity of ceramics with semiconductor properties is about 10-5 ~ 107ω.cm, 'me thepa ea semiconductor ea thepa ea ceramic e ka fumanoa ka doping kapa ho baka liphoso tsa lattice tse bakoang ke ho kheloha ha stoichiometric.Li-ceramics tse sebelisang mokhoa ona li kenyelletsa TiO2,

ZnO, CdS, BaTiO3, Fe2O3, Cr2O3 le SiC.Litšobotsi tse fapaneng tsali-ceramics tsa semiconductorke hore conductivity ea bona ea motlakase e fetoha le tikoloho, e ka sebelisoang ho etsa mefuta e sa tšoaneng ea lisebelisoa tse nang le bothata ba ceramic.

Joalo ka ha e na le mocheso, ha e na le khase, ha e na mongobo, ha e na khatello ea maikutlo, e lemohang khanya le li-sensor tse ling.Lisebelisoa tsa semiconductor spinel, tse kang Fe3O4, li kopantsoe le lisebelisoa tsa spinel tse se nang li-conductor, tse kang MgAl2O4, ka tharollo e tiileng e laoloang.

MgCr2O4, le Zr2TiO4, e ka sebelisoa e le li-thermistors, e leng lisebelisoa tse laoloang ka hloko tse hanyetsanang le mocheso.ZnO e ka fetoloa ka ho eketsa li-oxide tse kang Bi, Mn, Co le Cr.

Boholo ba li-oxide tsena ha li qhibilihe ka thata ho ZnO, empa li kheloha moeling oa lijo-thollo ho etsa mokoloko oa mokoallo, e le ho fumana lisebelisoa tsa ceramic tsa ZnO varistor, 'me ke mofuta oa thepa e nang le ts'ebetso e ntle ka ho fetisisa ho li-ceramics tsa varistor.

SiC doping (e kang carbon ea motho e ntšo, phofo ea graphite) e ka itokisetsalisebelisoa tsa semiconductore nang le botsitso bo phahameng ba mocheso, e sebelisoang e le lisebelisoa tse fapaneng tsa ho futhumatsa tse hanyetsanang, ke hore, lithupa tsa silicon carbon ka liboping tsa motlakase tse phahameng tsa mocheso.Laola ho hanyetsa le ho tšela karolo ea SiC ho fihlela hoo e batlang e le eng kapa eng e lakatsehang

Maemo a ts'ebetso (ho fihlela ho 1500 ° C), ho eketsa matla a eona a ho hanyetsa le ho fokotsa karolo ea sefapano sa motsoako oa ho futhumatsa ho tla eketsa mocheso o hlahisoang.Silicon carbon rod moeeng e tla etsahala karabelo ea oxidation, tšebeliso ea mocheso hangata e lekanyelitsoe ho 1600 ° C ka tlase, mofuta o tloaelehileng oa silicon carbon rod.

Mocheso o sireletsehileng oa ho sebetsa ke 1350°C.Ho SiC, athomo ea Si e nkeloa sebaka ke athomo ea N, hobane N e na le li-electrone tse ngata, ho na le li-electrone tse feteletseng, 'me boemo ba eona ba matla bo haufi le sehlopha se tlaase sa conduction' me ho bonolo ho phahamisa sehlopha sa conduction, kahoo boemo bona ba matla. e boetse e bitsoa boemo ba bafani, halofo ena

Li-conductors ke li-semiconductors tsa mofuta oa N kapa li-semiconductors tse tsamaisang ka elektroniki.Haeba athomo ea Al e sebelisoa ka SiC ho nka sebaka sa athomo ea Si, ka lebaka la ho haella ha elektronike, boemo ba matla a thepa bo entsoeng bo haufi le sehlopha sa valence electron ka holimo, ho bonolo ho amohela lielektrone, kahoo ho bitsoa ho amohela.

Boemo bo ka sehloohong ba matla, bo sieang sebaka se se nang batho sehlopheng sa valence se ka tsamaisang lielektrone hobane sebaka se se nang motho se sebetsa ka mokhoa o ts'oanang le sejari se nepahetseng, se bitsoa semiconductor ea mofuta oa P kapa semiconductor ea lesoba (H. Sarman,1989).


Nako ea poso: Sep-02-2023