Li-substrate tsa Semicera tsa 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC li entsoe ho finyella litlhoko tse ntseng li eketseha tsa matla a sebetsang hantle le bahlahisi ba lisebelisoa tsa RF. The 4 ° off-angle orientation e netefatsa kholo e ntlafalitsoeng ea epitaxial, e etsa hore substrate ena e be motheo o nepahetseng bakeng sa lisebelisoa tse fapaneng tsa semiconductor, ho kenyeletsoa li-MOSFET, IGBTs, le diode.
Karolo ena ea 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC e na le thepa e ntle ea thepa, ho kenyelletsa le conductivity e phahameng ea mocheso, ts'ebetso e ntle ea motlakase, le botsitso bo ikhethang ba mochini. Mokhoa o ka thōko oa mahlakoreng o thusa ho fokotsa boima ba micropipe le ho khothalletsa li-epitaxial layers tse bonolo, tse bohlokoa ho ntlafatsa tshebetso le ho tšepahala ha sesebelisoa sa ho qetela sa semiconductor.
Semicera's 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC substrates e fumaneha ka mefuta e fapaneng ea li-diameter, ho tloha ho 2 inches ho ea ho 6 inches, ho finyella litlhoko tse fapaneng tsa tlhahiso. Li-substrates tsa rona li entsoe ka nepo ho fana ka maemo a ts'oanang a doping le litšoaneleho tsa boleng bo holimo tsa boleng bo holimo, ho netefatsa hore sephaphatha ka seng se kopana le lintlha tse thata tse hlokahalang bakeng sa lits'ebetso tsa elektroniki tse tsoetseng pele.
Boitlamo ba Semicera ho boqapi le boleng bo tiisa hore li-substrate tsa rona tsa 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC li fana ka ts'ebetso e tsitsitseng mefuteng e mengata ea likopo ho tloha ho lisebelisoa tsa motlakase ho ea ho lisebelisoa tsa maqhubu a phahameng. Sehlahisoa sena se fana ka tharollo e ka tšeptjoang bakeng sa moloko o latelang oa li-semiconductors tse sebetsang hantle, tse sebetsang hantle, tse tšehetsang tsoelo-pele ea theknoloji liindastering tse kang tsa likoloi, tsa mehala le matla a tsosolositsoeng.
Litekanyetso tse amanang le boholo
| Boholo | 2-inch | 4-Intshi |
| Diameter | 50.8 mm±0.38 mm | 100.0 mm+0/-0.5 limilimithara |
| Mokhabiso oa Bokaholimo | 4° ho leba<11-20>±0.5° | 4° ho leba<11-20>±0.5° |
| Bolelele ba Phatlalatso ba Pele | 16.0 mm± 1.5mm | 32.5mm±2mm |
| Bolelele ba Bokhabane ba Bobeli | 8.0 limilimithara±1.5mm | 18.0 limilimithara ± 2 limilimithara |
| Maemo a Motheo a Flat | Parallelto <11-20> ± 5.0 ° | Parallelto<11-20>±5.0c |
| Boemo ba Bobeli ba Flat | 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo | 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo |
| Surface Finish | C-Sefahleho: Optical Polish, Si-Face: CMP | C-Sefahleho:OpticalPolish, Si-Face: CMP |
| Wafer Edge | Beveling | Beveling |
| Bokhopo ba Sekaho | Si-Face Ra<0.2 nm | Si-Face Ra<0.2nm |
| Botenya | 350.0±25.0um | 350.0±25.0um |
| Polytype | 4H | 4H |
| Doping | p-Mofuta | p-Mofuta |
Litekanyetso tse amanang le boholo
| Boholo | 6-Intshi |
| Diameter | 150.0 mm+0/-0.2 mm |
| Boemo ba Bokaholimo | 4° ho leba<11-20>±0.5° |
| Bolelele ba Phatlalatso ba Pele | 47.5 limilimithara ± 1.5mm |
| Bolelele ba Bokhabane ba Bobeli | Ha ho letho |
| Maemo a Motheo a Flat | E tsamaisanang le <11-20> ± 5.0 ° |
| Boemo ba bobeli ba Flat | 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo |
| Surface Finish | C-Sefahleho: Optical Polish, Si-Face:CMP |
| Wafer Edge | Beveling |
| Bokhopo ba Sekaho | Si-Face Ra<0.2 nm |
| Botenya | 350.0±25.0μm |
| Polytype | 4H |
| Doping | p-Mofuta |
Raman
Mokokotlo o rokotsang
Dislocation density (KOH etching)
Litšoantšo tsa KOH
