2 ~ 6 inch 4° off-angle P-mofuta 4H-SiC substrate

Tlhaloso e Khutšoanyane:

4 ° off-angle P-mofuta 4H-SiC substrate ke sesebelisoa se ikhethileng sa semiconductor, moo "4 ° off-angle" e bolelang "angle ea kristale" e leng 4 degrees off-angle, 'me "P-type" e bolela ho. mofuta oa conductivity oa semiconductor. Thepa ena e na le lits'ebetso tsa bohlokoa indastering ea semiconductor, haholo-holo mafapheng a lisebelisoa tsa elektronike tsa matla le lisebelisoa tsa elektronike tse phahameng haholo.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Li-substrate tsa Semicera tsa 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC li entsoe ho finyella litlhoko tse ntseng li eketseha tsa matla a sebetsang hantle le bahlahisi ba lisebelisoa tsa RF. The 4 ° off-angle orientation e netefatsa kholo e ntlafalitsoeng ea epitaxial, e etsa hore substrate ena e be motheo o nepahetseng bakeng sa lisebelisoa tse fapaneng tsa semiconductor, ho kenyeletsoa li-MOSFET, IGBTs, le diode.

Karolo ena ea 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC e na le thepa e ntle ea thepa, ho kenyelletsa le conductivity e phahameng ea mocheso, ts'ebetso e ntle ea motlakase, le botsitso bo ikhethang ba mochini. Mokhoa o ka thōko oa mahlakoreng o thusa ho fokotsa boima ba micropipe le ho khothalletsa li-epitaxial layers tse bonolo, tse bohlokoa ho ntlafatsa tshebetso le ho tšepahala ha sesebelisoa sa ho qetela sa semiconductor.

Semicera's 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC substrates e fumaneha ka mefuta e fapaneng ea li-diameter, ho tloha ho 2 inches ho ea ho 6 inches, ho finyella litlhoko tse fapaneng tsa tlhahiso. Li-substrates tsa rona li entsoe ka nepo ho fana ka maemo a ts'oanang a doping le litšoaneleho tsa boleng bo holimo tsa boleng bo holimo, ho netefatsa hore sephaphatha ka seng se kopana le lintlha tse thata tse hlokahalang bakeng sa lits'ebetso tsa elektroniki tse tsoetseng pele.

Boitlamo ba Semicera ho boqapi le boleng bo tiisa hore li-substrate tsa rona tsa 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC li fana ka ts'ebetso e tsitsitseng mefuteng e mengata ea likopo ho tloha ho lisebelisoa tsa motlakase ho ea ho lisebelisoa tsa maqhubu a phahameng. Sehlahisoa sena se fana ka tharollo e ka tšeptjoang bakeng sa moloko o latelang oa li-semiconductors tse sebetsang hantle, tse sebetsang hantle, tse tšehetsang tsoelo-pele ea theknoloji liindastering tse kang tsa likoloi, tsa mehala le matla a tsosolositsoeng.

Litekanyetso tse amanang le boholo

Boholo 2inch 4inch
Diameter 50.8 mm±0.38 mm 100.0 mm+0/-0.5 limilimithara
Mokhabiso oa Bokaholimo 4° ho leba<11-20>±0.5° 4° ho leba<11-20>±0.5°
Bolelele ba Phatlalatso ba Pele 16.0 mm± 1.5mm 32.5mm±2mm
Bolelele ba Bokhabane ba Bobeli 8.0 limilimithara±1.5mm 18.0 limilimithara ± 2 limilimithara
Maemo a Motheo a Flat Parallelto <11-20> ± 5.0 ° Parallelto<11-20>±5.0c
Boemo ba Bobeli ba Flat 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo
Surface Finish C-Sefahleho: Optical Polish, Si-Face: CMP C-Sefahleho:OpticalPolish, Si-Face: CMP
Wafer Edge Beveling Beveling
Bokhopo ba Sekaho Si-Face Ra<0.2 nm Si-Face Ra<0.2nm
Botenya 350.0±25.0um 350.0±25.0um
Polytype 4H 4H
Doping p-Mofuta p-Mofuta

Litekanyetso tse amanang le boholo

Boholo 6 intshi
Diameter 150.0 mm+0/-0.2 mm
Boemo ba Bokaholimo 4° ho leba<11-20>±0.5°
Bolelele ba Phatlalatso ba Pele 47.5 limilimithara ± 1.5mm
Bolelele ba Bokhabane ba Bobeli Ha ho letho
Maemo a Motheo a Flat E tsamaisanang le <11-20> ± 5.0 °
Boemo ba bobeli ba Flat 90 ° CW ho tloha ho ± 5.0 ° ea mantlha, silicon e shebile holimo
Surface Finish C-Sefahleho: Optical Polish, Si-Sefahleho:CMP
Wafer Edge Beveling
Bokhopo ba Sekaho Si-Face Ra<0.2 nm
Botenya 350.0±25.0μm
Polytype 4H
Doping p-Mofuta

Raman

2-6 inch 4° off-angle P-mofuta 4H-SiC substrate-3

Mokokotlo o rokotsang

2-6 inch 4° off-angle P-mofuta 4H-SiC substrate-4

Dislocation density (KOH etching)

2-6 inch 4° off-angle P-mofuta 4H-SiC substrate-5

Litšoantšo tsa KOH

2-6 inch 4° off-angle P-mofuta 4H-SiC substrate-6
Li-wafers tsa SiC

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