Semicera 3C-SiC Wafer Substrates e etselitsoe ho fana ka sethala se matla bakeng sa lisebelisoa tsa motlakase tsa moloko o latelang le lisebelisoa tsa maqhubu a phahameng. Ka thepa e phahameng ea mocheso le litšobotsi tsa motlakase, li-substrates tsena li etselitsoe ho finyella litlhoko tse hlokahalang tsa theknoloji ea morao-rao.
Sebopeho sa 3C-SiC (Cubic Silicon Carbide) sa Semicera Wafer Substrates se fana ka melemo e ikhethang, ho kenyelletsa le conductivity e phahameng ea mocheso le coefficient e tlase ea katoloso ea mocheso ha e bapisoa le lisebelisoa tse ling tsa semiconductor. Sena se ba etsa khetho e babatsehang bakeng sa lisebelisoa tse sebetsang tlas'a mocheso o feteletseng le maemo a matla a phahameng.
Ka matla a phahameng a ho senya motlakase le botsitso bo phahameng ba lik'hemik'hale, Semicera 3C-SiC Wafer Substrates e netefatsa tshebetso e tšoarellang nako e telele le ho tšepahala. Lintho tsena li bohlokoa bakeng sa lits'ebetso tse joalo ka radar ea maqhubu a holimo, mabone a boemo bo tiileng, le li-inverters tsa motlakase, moo ho sebetsa hantle le ho tšoarella ho leng bohlokoa.
Boitlamo ba Semicera ho boleng bo bonahala ts'ebetsong e hlokolosi ea tlhahiso ea 3C-SiC Wafer Substrates ea bona, e netefatsang ho ts'oana le botsitso ho sehlopha se seng le se seng. Ho nepahala hona ho kenya letsoho tšebetsong e akaretsang le bophelo bo bolelele ba lisebelisoa tsa elektroniki tse hahiloeng holim'a tsona.
Ka ho khetha Semicera 3C-SiC Wafer Substrates, bahlahisi ba fumana lisebelisoa tsa morao-rao tse nolofalletsang nts'etsopele ea likaroloana tsa elektroniki tse nyane, tse potlakileng le tse sebetsang hantle. Semicera e ntse e tsoela pele ho tšehetsa boqapi ba theknoloji ka ho fana ka litharollo tse tšepahalang tse fihlelang litlhoko tse tsoelang pele tsa indasteri ea semiconductor.
| Lintho | Tlhahiso | Patlisiso | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
| Litekanyetso tsa Motlakase | |||
| Dopant | n-mofuta oa Nitrojene | ||
| Ho hanyetsa | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Botenya | 350±25 μm | ||
| Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
| Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
| Folete ea bobeli | Ha ho letho | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Sebopeho | |||
| Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
| Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Boleng ba Pele | |||
| Pele | Si | ||
| Qetello ea bokaholimo | Si-face CMP | ||
| Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
| Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
| Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
| Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
| Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
| Ho tšoaea ka laser ka pele | Ha ho letho | ||
| Boleng ba Morao | |||
| Qetello ea morao | C-sefahleho sa CMP | ||
| Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
| Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
| Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
| Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
| Qetello | |||
| Qetello | Chamfer | ||
| Sephutheloana | |||
| Sephutheloana | Epi-reading ka sephutheloana sa vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
| *Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. | |||
