4″ 6 ″ Semi-Insulating SiC Substrate

Tlhaloso e Khutšoanyane:

Semi-insulating SiC substrates ke thepa ea semiconductor e nang le resistivity e phahameng, e nang le resistivity e phahameng ho feta 100,000Ω·cm. Li-Semi-insulating SiC substrates li sebelisoa haholo ho etsa lisebelisoa tsa microwave RF tse kang gallium nitride microwave RF le li-high electron mobility transistors (HEMTs). Lisebelisoa tsena li sebelisoa haholo-holo lipuisanong tsa 5G, puisano ea sathelaete, radars le masimo a mang.

 

 


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicera's 4" 6" Semi-Insulating SiC Substrate ke thepa ea boleng bo holimo e etselitsoeng ho fihlela litlhoko tse thata tsa RF le lits'ebetso tsa lisebelisoa tsa motlakase. The substrate e kopanya conductivity e ntle ea mocheso le matla a phahameng a ho senyeha ha silicon carbide le thepa ea semi-insulating, e leng se etsang hore e be khetho e nepahetseng bakeng sa ho ntlafatsa lisebelisoa tse tsoetseng pele tsa semiconductor.

4" 6" Semi-Insulating SiC Substrate e entsoe ka hloko ho netefatsa lisebelisoa tse hloekileng tse phahameng le ts'ebetso e tsitsitseng ea semi-insulating. Sena se etsa bonnete ba hore substrate e fana ka karohano e hlokahalang ea motlakase ho lisebelisoa tsa RF joalo ka liamplifiers le transistors, ha e ntse e fana ka ts'ebetso ea mocheso e hlokahalang bakeng sa lits'ebetso tsa matla a phahameng. Sephetho ke substrate e feto-fetohang e ka sebelisoang mefuteng e mengata ea lihlahisoa tsa elektronike tse sebetsang hantle.

Semicera e hlokomela bohlokoa ba ho fana ka li-substrates tse tšepahalang, tse se nang sekoli bakeng sa lits'ebetso tsa bohlokoa tsa semiconductor. 4" 6" Semi-Insulating SiC Substrate ea rona e hlahisoa ho sebelisoa mekhoa e tsoetseng pele ea tlhahiso e fokotsang bofokoli ba kristale le ho ntlafatsa ho tšoana ha lintho. Sena se nolofalletsa sehlahisoa ho ts'ehetsa tlhahiso ea lisebelisoa ka ts'ebetso e ntlafalitsoeng, botsitso le bophelo bohle.

Boitlamo ba Semicera ba boleng bo netefatsa hore 4" 6" Semi-Insulating SiC Substrate ea rona e fana ka ts'ebetso e ts'epahalang le e ts'oanang ho likopo tse fapaneng. Hore na o nts'etsapele lisebelisoa tsa maqhubu a holimo kapa litharollo tsa motlakase tse baballang matla, li-substrates tsa rona tsa SiC tse kenyang letsoho li fana ka motheo oa katleho ea lisebelisoa tsa elektroniki tsa moloko o latelang.

Litekanyetso tsa motheo

Boholo

6-inch 4-inch
Diameter 150.0mm+0mm/-0.2mm 100.0mm+0mm/-0.5mm
Boemo ba Bokaholimo {0001}±0.2°
Maemo a Motheo a Flat / <1120>±5°
Boemo ba bobeli ba Flat / Sefahleho sa silicon se shebile holimo: 90 ° CW ho tloha ho Prime flat士5 °
Bolelele ba Phatlalatso ba Pele / 32.5 limilimithara le 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli / 18.0 limilimithara le 2.0 limilimithara
Notch Orientation <1100>±1.0° /
Notch Orientation 1.0mm+0.25 mm/-0.00 mm /
Notch Angle 90°+5°/-1° /
Botenya 500.0um 士25.0um
Mofuta oa Conductive Semi-insulating

Lintlha tsa boleng ba kristale

ltem 6-inch 4-inch
Ho hanyetsa ≥1E9Q·cm
Polytype Ha ho e lumelletsoeng
Boima ba Micropipe ≤0.5/cm2 ≤0.3/cm2
Hex Plates ka khanya e matla e phahameng Ha ho e lumelletsoeng
Visual Carbon Inclusions ka holimo Kakaretso≤0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity - E lekoa ke Letlapa le sa amaneng le batho.

4 6 Semi-Insulating SiC Substrate-3

Boima ba Micropipe

4 6 Semi-Insulating SiC Substrate-4
Li-wafers tsa SiC

  • E fetileng:
  • E 'ngoe: