Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates e entsoe ka boqhetseke ho fihlela litlhoko tse nepahetseng tsa indasteri ea semiconductor. Li-substrates tsena li entsoe ka bokhabane bo ikhethang le bohloeki, li fana ka sethala se nepahetseng bakeng sa lisebelisoa tsa elektroniki tse tsoetseng pele.
Li-wafer tsena tsa HPSI SiC li khetholloa ka mokhoa o phahameng oa ho tsamaisa mocheso le thepa ea ho kenya motlakase, e leng se etsang hore e be khetho e babatsehang bakeng sa lisebelisoa tse phahameng le tse matla haholo. Ts'ebetso ea ho bentša ka mahlakoreng a mabeli e tiisa hore ho na le mahlaku a fokolang a holim'a metsi, e leng a bohlokoa bakeng sa ho ntlafatsa ts'ebetso ea lisebelisoa le ho phela nako e telele.
Bohloeki bo phahameng ba li-wafers tsa Semicera's SiC bo fokotsa bofokoli le litšila, bo lebisang ho litheko tse phahameng tsa chai le ts'epahalo ea lisebelisoa. Li-substrates tsena li loketse lits'ebetso tse fapaneng, ho kenyeletsoa lisebelisoa tsa microwave, lisebelisoa tsa elektroniki tsa motlakase, le theknoloji ea LED, moo ho nepahala le ho tšoarella ho hlokahalang.
E tsepamisitse maikutlo ho boqapi le boleng, Semicera e sebelisa mekhoa e tsoetseng pele ea tlhahiso ho hlahisa liphaphatha tse fihlelang litlhoko tse thata tsa lisebelisoa tsa elektroniki tsa sejoale-joale. Ho belisoa ka mahlakoreng a mabeli ha ho ntlafatse matla a mochine feela empa hape ho thusa ho kopanya hamolemo le lisebelisoa tse ling tsa semiconductor.
Ka ho khetha Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, bahlahisi ba ka sebelisa melemo ea taolo e ntlafalitsoeng ea mocheso le ho kenya motlakase, ba bula tsela bakeng sa nts'etsopele ea lisebelisoa tsa elektroniki tse sebetsang hantle le tse matla haholoanyane. Semicera e ntse e tsoela pele ho etella pele indasteri ka boitlamo ba eona ba boleng le tsoelo-pele ea theknoloji.
Lintho | Tlhahiso | Patlisiso | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
Litekanyetso tsa Motlakase | |||
Dopant | n-mofuta oa Nitrojene | ||
Ho hanyetsa | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Botenya | 350±25 μm | ||
Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
Folete ea bobeli | Ha ho letho | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Sebopeho | |||
Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Boleng ba Pele | |||
Pele | Si | ||
Qetello ea bokaholimo | Si-face CMP | ||
Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
Ho tšoaea ka laser ka pele | Ha ho letho | ||
Boleng ba Morao | |||
Qetello ea morao | C-sefahleho sa CMP | ||
Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
Qetello | |||
Qetello | Chamfer | ||
Sephutheloana | |||
Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. |