4 Inch SiC Substrate N-mofuta

Tlhaloso e Khutšoanyane:

Semicera e fana ka mefuta e mengata ea li-wafers tsa 4H-8H SiC. Ka lilemo tse ngata, re bile moetsi le mofani oa lihlahisoa ho liindasteri tsa semiconductor le photovoltaic. Lihlahisoa tsa rona tsa mantlha li kenyelletsa: lipoleiti tsa silicon carbide etch, li-trailer tsa silicon carbide boat, likepe tsa silicon carbide wafer (PV & Semiconductor), li-tubes tsa silicon carbide furnace, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide libalaka, hammoho le CVD SiC coatings. Liaparo tsa TaC. E akaretsa boholo ba limmaraka tsa Europe le Amerika. Re labalabela ho ba molekane oa hau oa nako e telele Chaena.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.

Matla a Semicera a ka fana ka bareki ba boleng bo phahameng ba Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Ho phaella moo, re ka fana ka bareki ba nang le homogeneous le heterogeneous silicon carbide epitaxial sheets; Re ka boela ra iketsetsa leqephe la epitaxial ho latela litlhoko tse khethehileng tsa bareki, 'me ha ho na palo e fokolang ea taelo.

Lintho	Tlhahiso	Patlisiso	Dummy
Crystal Parameters
Polytype	4H
Phoso ea ho shebana le bokaholimo	<11-20>4±0.15°
Litekanyetso tsa Motlakase
Dopant	n-mofuta oa Nitrojene
Ho hanyetsa	0.015-0.025ohm · cm
Mechanical Parameters
Diameter	99.5 - 100 limilimithara
Botenya	350±25 μm
Boemo ba mantlha bo bataletseng	[1-100]±5°
Bolelele ba pele bo bataletseng	32.5±1.5mm
Boemo ba bobeli bo bataletseng	90 ° CW ho tloha foleteng ea mantlha ± 5 °. silicon e shebile holimo
Bolelele ba bobeli bo bataletseng	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Inamela	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Sebopeho
Boima ba micropipe	≤1 e/cm2	≤5 ea/cm2	≤10 ea/cm2
Litšila tsa tšepe	≤5E10atoms/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Boleng ba Pele
Pele	Si
Qetello ea bokaholimo	Si-face CMP
Likaroloana	≤60ea/wafer (boholo ≥0.3μm)	NA
Mengwapo	≤2ea/mm. Bolelele ba kakaretso ≤Diameter	Bolelele bo akaretsang≤2*Diameter	NA
Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso	Ha ho letho		NA
Li-edge chips/indents/fracture/hex plates	Ha ho letho		NA
Libaka tsa polytype	Ha ho letho	Kakaretso≤20%	Kakaretso≤30%
Ho tšoaea ka laser ka pele	Ha ho letho
Boleng ba Morao
Qetello ea morao	C-sefahleho sa CMP
Mengwapo	≤5ea/mm, bolelele bo akaretsang≤2* bophara	NA
Litšitiso tse ka morao (li-chips / indents)	Ha ho letho
Bokhopo ba mokokotlo	Ra≤0.2nm (5μm*5μm)
Ho tšoaea ka morao laser	1 mm (ho tloha pheletsong e ka holimo)
Qetello
Qetello	Chamfer
Sephutheloana
Sephutheloana	Mokotla o ka hare o tlatsitsoe ka naetrojene 'me mokotla o ka ntle oa tlosoa. Multi-wafer cassette, epi-ready.
*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD.