6-inch LiNbO3 Bonding sephaphatha

Tlhaloso e Khutšoanyane:

Semicera's 6-inch LiNbO3 bonded wafer e loketse mekhoa e tsoetseng pele ea ho kopanya lisebelisoa tsa optoelectronic, MEMS, le li-circuits tse kopantsoeng (ICs). Ka litšoaneleho tsa eona tse holimo tsa tlamahano, e loketse ho fihlela tumellano e nepahetseng ea lera le ho kopanya, ho netefatsa ts'ebetso le katleho ea lisebelisoa tsa semiconductor. Bohloeki bo phahameng ba sephaphatha bo fokotsa tšilafalo, e leng se etsang hore e be khetho e tšepahalang bakeng sa lits'ebetso tse hlokang ho nepahala ho fetisisa.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicera's 6-inch LiNbO3 Bonding Wafer e etselitsoe ho kopana le maemo a thata a indasteri ea semiconductor, e fana ka ts'ebetso e ke keng ea bapisoa libakeng tsa lipatlisiso le tsa tlhahiso. Ebang ke tsa li-optoelectronics tsa maemo a holimo, MEMS, kapa liphutheloana tse tsoetseng pele tsa semiconductor, sephaka sena se tlamang se fana ka ts'epo le ho tšoarella ho hlokahalang bakeng sa nts'etsopele ea mahlale a morao-rao.

Lefapheng la semiconductor, 6-inch LiNbO3 Bonding Wafer e sebelisoa haholo bakeng sa ho kopanya likarolo tse tšesaane ho lisebelisoa tsa optoelectronic, li-sensor, le microelectromechanical systems (MEMS). Mehaho ea eona e ikhethang e etsa hore e be karolo ea bohlokoa bakeng sa lits'ebetso tse hlokang ho hokahanngoa ka nepo, joalo ka ha ho etsoa li-circuits (ICs) le lisebelisoa tsa lifoto. Bohloeki bo phahameng ba sephaphatha bo tiisa hore sehlahisoa sa ho qetela se boloka ts'ebetso e nepahetseng, ho fokotsa kotsi ea tšoaetso e ka amang botšepehi ba lisebelisoa.

Thermal le thepa ea motlakase ea LiNbO3
Sebaka se qhibilihang 1250 ℃
Mocheso oa curie 1140 ℃
Thermal conductivity 38 W/m/K @ 25 ℃
Coefficient ea katoloso ea mocheso (@ 25°C)

//a, 2.0×10-6/K

//c, 2.2×10-6/K

Ho hanyetsa 2×10-6Ω·cm @ 200 ℃
Dielectric kamehla

εS11/ε0=43, εT11/ε0=78

εS33/ε0=28, εT33/ε0= 2

Piezoelectric kamehla

D22=2.04×10-11C/N

D33=19.22×10-11C/N

Electro-optic coefficient

γT33=32 pm/V, γS33=31 pm/V,

γT31=10 pm/V, γS31=8.6 pm/V,

γT22=6.8 pm/V, γS22=3.4 pm/V,

Half-wave voltage, DC
Sebaka sa motlakase // z, leseli ⊥ Z;
Sebaka sa motlakase // x kapa y, leseli ⊥ z

3.03 KV

4.02 KV

6-inch LiNbO3 Bonding Wafer e tsoang Semicera e etselitsoe ka ho khetheha lits'ebetso tse tsoetseng pele indastering ea semiconductor le optoelectronics. E tsebahala ka ho hanyetsa ho apara ka tsela e phahameng, botsitso bo phahameng ba mocheso, le bohloeki bo ikhethang, lesela lena la tlamahano le loketse ho etsa lihlahisoa tse phahameng tsa semiconductor, tse fanang ka botšepehi le ho nepahala ha nako e telele esita le maemong a boima.

E entsoe ka theknoloji e tsoetseng pele, 6-inch LiNbO3 Bonding Wafer e netefatsa tšilafalo e fokolang, e leng ea bohlokoa bakeng sa mekhoa ea tlhahiso ea semiconductor e hlokang maemo a phahameng a bohloeki. Botsitso ba eona bo botle ba mocheso bo e lumella ho mamella mocheso o phahameng ntle le ho senya botšepehi ba sebopeho, e leng se etsang hore e be khetho e ka tšeptjoang bakeng sa likopo tsa ho kopanya mocheso o phahameng. Ho feta moo, ts'ebetso e ikhethang ea ho sesa ha wafer e tiisa hore e sebetsa khafetsa ho feta ts'ebeliso e telele, e fana ka ts'ebetso ea nako e telele le ho fokotsa tlhoko ea ho nkeloa sebaka khafetsa.

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