6 Inch N-mofuta oa SiC Substrate

Tlhaloso e Khutšoanyane:

Semicera e fana ka mefuta e mengata ea li-wafers tsa 4H-8H SiC. Ka lilemo tse ngata, re bile moetsi le mofani oa lihlahisoa ho liindasteri tsa semiconductor le photovoltaic. Lihlahisoa tsa rona tsa mantlha li kenyelletsa: lipoleiti tsa silicon carbide etch, li-trailer tsa silicon carbide boat, likepe tsa silicon carbide wafer (PV & Semiconductor), li-tubes tsa silicon carbide furnace, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide libalaka, hammoho le CVD SiC coatings. Liaparo tsa TaC. E akaretsa boholo ba limmaraka tsa Europe le Amerika. Re labalabela ho ba molekane oa hau oa nako e telele Chaena.

 

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.

Thepa ea semiconductor ea moloko oa boraro haholo-holo e kenyelletsa SiC, GaN, daemane, joalo-joalo, hobane bophara ba lekhalo la sehlopha sa eona (Mohlala) bo boholo ho feta kapa bo lekana le li-volts tsa 2.3 electron (eV), tse tsejoang hape e le lisebelisoa tse pharaletseng tsa lekhalo la semiconductor. Ha ho bapisoa le lisebelisoa tsa semiconductor tsa moloko oa pele le oa bobeli, lisebelisoa tsa semiconductor tsa moloko oa boraro li na le melemo ea ho tsamaisa mocheso o phahameng, motlakase o senyehang haholo, tekanyo e phahameng ea ho falla ha elektronike le matla a phahameng a ho kopanya, a ka finyellang litlhoko tse ncha tsa theknoloji ea morao-rao ea elektroniki bakeng sa boemo bo phahameng. mocheso, matla a phahameng, khatello e phahameng, maqhubu a phahameng le ho hanyetsa mahlaseli le maemo a mang a thata. E na le litebello tsa bohlokoa tsa ts'ebeliso maemong a ts'ireletso ea naha, sefofane, sefofane, tlhahlobo ea oli, polokelo ea mahlo, joalo-joalo, 'me e ka fokotsa tahlehelo ea matla ka ho feta 50% liindastering tse ngata tsa maano tse kang likhokahano tsa Broadband, matla a letsatsi, tlhahiso ea likoloi, mabone a semiconductor, le marang-rang a bohlale, 'me a ka fokotsa bophahamo ba thepa ka ho feta 75%, e leng ntho ea bohlokoahali bakeng sa nts'etsopele ea mahlale a batho le thekenoloji.

Matla a Semicera a ka fana ka bareki ba boleng bo phahameng ba Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Ho phaella moo, re ka fana ka bareki ba nang le homogeneous le heterogeneous silicon carbide epitaxial sheets; Re ka boela ra iketsetsa leqephe la epitaxial ho latela litlhoko tse khethehileng tsa bareki, 'me ha ho na palo e fokolang ea taelo.

Lintho

Tlhahiso

Patlisiso

Dummy

Crystal Parameters

Polytype

4H

Phoso ea ho shebana le bokaholimo

<11-20>4±0.15°

Litekanyetso tsa Motlakase

Dopant

n-mofuta oa Nitrojene

Ho hanyetsa

0.015-0.025ohm · cm

Mechanical Parameters

Diameter

150.0±0.2mm

Botenya

350±25 μm

Boemo ba mantlha bo bataletseng

[1-100]±5°

Bolelele ba pele bo bataletseng

47.5±1.5mm

Folete ea bobeli

Ha ho letho

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Inamela

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Sebopeho

Boima ba micropipe

<1 e/cm2

<10 e/cm2

<15 e/cm2

Litšila tsa tšepe

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Boleng ba Pele

Pele

Si

Qetello ea bokaholimo

Si-face CMP

Likaroloana

≤60ea/wafer (boholo ≥0.3μm)

NA

Mengwapo

≤5ea/mm. Bolelele ba kakaretso ≤Diameter

Bolelele bo akaretsang≤2*Diameter

NA

Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso

Ha ho letho

NA

Li-edge chips/indents/fracture/hex plates

Ha ho letho

Libaka tsa polytype

Ha ho letho

Kakaretso≤20%

Kakaretso≤30%

Ho tšoaea ka laser ka pele

Ha ho letho

Boleng ba Morao

Qetello ea morao

C-sefahleho sa CMP

Mengwapo

≤5ea/mm, bolelele bo akaretsang≤2* bophara

NA

Litšitiso tse ka morao (li-chips / indents)

Ha ho letho

Bokhopo ba mokokotlo

Ra≤0.2nm (5μm*5μm)

Ho tšoaea ka morao laser

1 mm (ho tloha pheletsong e ka holimo)

Qetello

Qetello

Chamfer

Sephutheloana

Sephutheloana

Epi e loketse ho paka ka vacuum

Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata

*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD.

tech_1_2_size
Li-wafers tsa SiC

Semicera Sebaka sa mosebetsi Sebaka sa mosebetsi sa Semicera 2 Mochini oa lisebelisoa Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD Tshebeletso ya rona


  • E fetileng:
  • E 'ngoe: