6 inch n-mofuta oa sic substrate

Tlhaloso e Khutšoanyane:

6-inch n-type SiC substrate ke thepa ea semiconductor e khetholloang ka tšebeliso ea boholo ba 6-inch wafer, e leng ho eketsang palo ea lisebelisoa tse ka hlahisoang ka lesela le le leng holim'a sebaka se seholoanyane, kahoo ho fokotsa litšenyehelo tsa boemo ba lisebelisoa. . Ntlafatso le ts'ebeliso ea li-substrates tsa 6-inch n-type SiC li ruile molemo ho nts'etsopele ea mahlale a joalo ka mokhoa oa ho hola oa RAF, o fokotsang ho kheloha ka ho seha likristale hammoho le li-dislocation le litsela tse tšoanang le likristale tse ntseng li hola hape, ka hona ho ntlafatsa boleng ba substrate. Tšebeliso ea karoloana ena e bohlokoa haholo ho ntlafatsa katleho ea tlhahiso le ho fokotsa litšenyehelo tsa lisebelisoa tsa motlakase tsa SiC.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.

Thepa ea semiconductor ea moloko oa boraro haholo-holo e kenyelletsa SiC, GaN, daemane, joalo-joalo, hobane bophara ba lekhalo la sehlopha sa eona (Mohlala) bo boholo ho feta kapa bo lekana le li-volts tsa 2.3 electron (eV), tse tsejoang hape e le lisebelisoa tse pharaletseng tsa lekhalo la semiconductor. Ha ho bapisoa le lisebelisoa tsa semiconductor tsa moloko oa pele le oa bobeli, lisebelisoa tsa semiconductor tsa moloko oa boraro li na le melemo ea ho tsamaisa mocheso o phahameng, motlakase o senyehang haholo, tekanyo e phahameng ea ho falla ha elektronike le matla a phahameng a ho kopanya, a ka finyellang litlhoko tse ncha tsa theknoloji ea morao-rao ea elektroniki bakeng sa boemo bo phahameng. mocheso, matla a phahameng, khatello e phahameng, maqhubu a phahameng le ho hanyetsa mahlaseli le maemo a mang a thata. E na le litebello tsa bohlokoa tsa ts'ebeliso maemong a ts'ireletso ea naha, sefofane, sefofane, tlhahlobo ea oli, polokelo ea mahlo, joalo-joalo, 'me e ka fokotsa tahlehelo ea matla ka ho feta 50% liindastering tse ngata tsa maano tse kang likhokahano tsa Broadband, matla a letsatsi, tlhahiso ea likoloi, mabone a semiconductor, le marang-rang a bohlale, 'me a ka fokotsa bophahamo ba thepa ka ho feta 75%, e leng ntho ea bohlokoahali bakeng sa nts'etsopele ea mahlale a batho le thekenoloji.

Matla a Semicera a ka fana ka bareki ba boleng bo phahameng ba Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Ho phaella moo, re ka fana ka bareki ba nang le homogeneous le heterogeneous silicon carbide epitaxial sheets; Re ka boela ra iketsetsa leqephe la epitaxial ho latela litlhoko tse khethehileng tsa bareki, 'me ha ho na palo e fokolang ea taelo.

LITŠOANTŠISO TSA MOTHEO

Boholo	6-inch
Diameter	150.0mm+0mm/-0.2mm
Boemo ba Bokaholimo	off-axis: 4 ° ho ea <1120> ± 0.5 °
Bolelele ba Phatlalatso ba Pele	47.5mm1.5 limilimithara
Maemo a Motheo a Flat	<1120>±1.0°
Sethala sa Bobeli	Ha ho letho
Botenya	350.0um±25.0um
Polytype	4H
Mofuta oa Conductive	n-mofuta

TŠEBELETSO TŠEBELETSO TSA TŠEBELETSO

6-inch
Ntho	Sehlopha sa P-MOS	P-SBD Kereiti
Ho hanyetsa	0.015Ω·cm-0.025Ω·cm
Polytype	Ha ho e lumelletsoeng
Boima ba Micropipe	≤0.2/cm2	≤0.5/cm2
EPD	≤4000/cm2	≤8000/cm2
TED	≤3000/cm2	≤6000/cm2
BPD	≤1000/cm2	≤2000/cm2
TSD	≤300/cm2	≤1000/cm2
SF(E lekantsoe keUV-PL-355nm)	≤0.5% sebaka	≤1% sebaka
Hex lipoleiti ka khanya e phahameng	Ha ho e lumelletsoeng
Visual CarbonInclusions ka khanya e matla e phahameng	Cumulativearea≤0.05%