Semicera's 8 Inch N-type SiC Wafers e ka pele ho popontšuoa ea semiconductor, e fana ka motheo o tiileng bakeng sa nts'etsopele ea lisebelisoa tsa elektroniki tse sebetsang hantle haholo. Li-wafer tsena li etselitsoe ho khahlametsa litlhoko tse matla tsa ts'ebeliso ea sejoale-joale ea elektroniki, ho tloha ho lisebelisoa tsa motlakase ho isa ho li-circuits tsa maqhubu a holimo.
Li-doping tsa mofuta oa N ho li-wafer tsena tsa SiC li ntlafatsa tšebetso ea tsona ea motlakase, li etsa hore e be tse loketseng bakeng sa lits'ebetso tse fapaneng, ho kenyeletsoa li-diode tsa motlakase, li-transistors le liamplifiers. The conductivity e phahameng e netefatsa tahlehelo e fokolang ea matla le ts'ebetso e sebetsang hantle, e leng ea bohlokoa bakeng sa lisebelisoa tse sebetsang ka maqhubu a phahameng le matla a matla.
Semicera e sebelisa mekhoa e tsoetseng pele ea tlhahiso ho hlahisa liphaephe tsa SiC tse nang le ts'ebetso e ikhethang ea bokaholimo le bofokoli bo fokolang. Boemo bona ba ho nepahala bo bohlokoa bakeng sa lits'ebetso tse hlokang ts'ebetso e ts'oanang le ts'ebetso e tšoarellang, joalo ka indastering ea lifofane, tsa likoloi le tsa likhokahano.
Ho kenyelletsa Semicera's 8 Inch N-type SiC Wafers moleng oa hau oa tlhahiso ho fana ka motheo oa ho theha likarolo tse khonang ho mamella maemo a thata le mocheso o phahameng. Li-wafers tsena li nepahetse bakeng sa lits'ebetso tsa phetolo ea matla, theknoloji ea RF, le likarolo tse ling tse boima.
Ho khetha Semicera's 8 Inch N-type SiC Wafers ho bolela ho tsetela ho sehlahisoa se kopanyang mahlale a boleng bo holimo le boenjiniere bo nepahetseng. Semicera e ikemiseditse ho ntshetsa pele bokgoni ba mahlale a semiconductor, e fana ka ditharollo tse matlafatsang tshebetso le ho tshepeha ha disebediswa tsa hao tsa elektroniki.
Lintho | Tlhahiso | Patlisiso | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
Litekanyetso tsa Motlakase | |||
Dopant | n-mofuta oa Nitrojene | ||
Ho hanyetsa | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Botenya | 350±25 μm | ||
Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
Folete ea bobeli | Ha ho letho | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Sebopeho | |||
Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Boleng ba Pele | |||
Pele | Si | ||
Qetello ea bokaholimo | Si-face CMP | ||
Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
Ho tšoaea ka laser ka pele | Ha ho letho | ||
Boleng ba Morao | |||
Qetello ea morao | C-sefahleho sa CMP | ||
Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
Qetello | |||
Qetello | Chamfer | ||
Sephutheloana | |||
Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. |