8lnch n-mofuta oa Conductive SiC Substrate

Tlhaloso e Khutšoanyane:

8-inch n-type SiC substrate ke e tsoetseng pele ea n-type silicon carbide (SiC) e le 'ngoe ea kristale substrate e nang le bophara ba ho tloha 195 ho ea ho 205 mm le botenya ho tloha ho 300 ho isa ho 650 microns. Substrate ena e na le khatello e phahameng ea li-doping le boemo ba mahloriso bo ntlafalitsoeng ka hloko, e fana ka ts'ebetso e ntle haholo bakeng sa lits'ebetso tse fapaneng tsa semiconductor.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

8 lnch n-type Conductive SiC Substrate e fana ka ts'ebetso e ke keng ea bapisoa bakeng sa lisebelisoa tsa elektroniki tsa motlakase, e fana ka conductivity e ntle ea mocheso, matla a phahameng a ho senyeha le boleng bo botle bakeng sa lits'ebetso tse tsoetseng pele tsa semiconductor. Semicera e fana ka litharollo tse etelletseng pele indastering ka boenjiniere ba eona ba 8 lnch n-type Conductive SiC Substrate.

Semicera's 8 lnch n-type Conductive SiC Substrate ke thepa e tsoetseng pele e etselitsoeng ho fihlela litlhoko tse ntseng li hola tsa lisebelisoa tsa motlakase tsa motlakase le lits'ebetso tse sebetsang hantle tsa semiconductor. The substrate e kopanya melemo ea silicon carbide le n-type conductivity ho fana ka ts'ebetso e ke keng ea lekanngoa lisebelisoa tse hlokang matla a phahameng a matla, katleho ea mocheso, le ho tšepahala.

Semicera's 8 lnch n-type Conductive SiC Substrate e entsoe ka hloko ho netefatsa boleng bo holimo le botsitso. E na le ts'ebetso e ntle ea mocheso bakeng sa ho qhala mocheso hantle, e etsa hore e be e loketseng lits'ebetso tsa matla a phahameng joalo ka li-inverters tsa motlakase, diode le transistors. Ho feta moo, matla a phahameng a ho senyeha ha substrate a netefatsa hore e khona ho mamella maemo a boima, e fana ka sethala se matla sa lisebelisoa tsa elektroniki tse sebetsang hantle.

Semicera e hlokomela karolo ea bohlokoa eo 8 lnch n-type Conductive SiC Substrate e e bapalang ho nts'etsopele ea theknoloji ea semiconductor. Li-substrates tsa rona li etsoa ka mekhoa ea morao-rao ho netefatsa hore ho na le sekoli se fokolang, e leng sa bohlokoa ho nts'etsopele ea lisebelisoa tse sebetsang hantle. Tlhokomelo ena ea lintlha e thusa lihlahisoa tse tšehetsang tlhahiso ea lisebelisoa tsa elektronike tsa moloko o latelang ka ts'ebetso e phahameng le ho tšoarella.

8 lnch n-type Conductive SiC Substrate ea rona le eona e etselitsoe ho fihlela litlhoko tsa mefuta e mengata ea lits'ebetso ho tloha ho likoloi ho isa ho matla a ka nchafatsoang. N-mofuta oa conductivity o fana ka thepa ea motlakase e hlokahalang ho hlahisa lisebelisoa tse sebetsang hantle tsa matla, ho etsa hore substrate ena e be karolo ea bohlokoa phetohong ea theknoloji e sebetsang hantle haholoanyane.

Ho Semicera, re ikemiselitse ho fana ka li-substrates tse tsamaisang boqapi ho tlhahiso ea semiconductor. 8 lnch n-type Conductive SiC Substrate ke bopaki ba boinehelo ba rona ba boleng le bokhabane, ho netefatsa hore bareki ba rona ba fumana lisebelisoa tse ntle ka ho fetisisa bakeng sa lits'ebetso tsa bona.

Litekanyetso tsa motheo

Boholo 8-inch
Diameter 200.0mm+0mm/-0.2mm
Boemo ba Bokaholimo off-axis:4° ho leba <1120>士0.5°
Notch Orientation <1100>士1°
Notch Angle 90°+5°/-1°
Botebo ba Notch 1mm+0.25mm/-0mm
Sethala sa Bobeli /
Botenya 500.0士25.0um/350.0±25.0um
Polytype 4H
Mofuta oa Conductive n-mofuta

 

8lnch n-mofuta oa sic Substrate-2
Li-wafers tsa SiC

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