CVD SiC Coating Epitaxial Deposition In Epitaxy Reactor System

Tlhaloso e Khutšoanyane:

Semicera e fana ka mefuta e fapaneng ea li-susceptors le likarolo tsa graphite tse etselitsoeng li-epitaxy reactor tse fapaneng.

Ka tšebelisano-'moho le li-OEM tse etelletseng pele indastering, boiphihlelo bo pharalletseng ba thepa, le bokhoni bo tsoetseng pele ba tlhahiso, Semicera e fana ka meralo e hlophisitsoeng ho fihlela litlhoko tse ikhethileng tsa kopo ea hau. Boitlamo ba rona ba bokhabane bo netefatsa hore o fumana litharollo tse nepahetseng bakeng sa litlhoko tsa hau tsa epitaxy reactor.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Khampani ea rona e fana kaHo roala ha SiCts'ebetso ea litšebeletso holim'a graphite, ceramics le lisebelisoa tse ling ka mokhoa oa CVD, e le hore likhase tse khethehileng tse nang le carbon le silicon li ka itšoara ka mocheso o phahameng ho fumana limolek'hule tsa Sic tse hloekileng, tse ka behoang holim'a lisebelisoa tse koahetsoeng ho etsaLera le sireletsang la SiCbakeng sa mofuta oa barrel hy pnotic.

Lintlha tse ka sehloohong:

1 .Bohloeki bo phahameng ba SiC bo koahetsoeng ke graphite

2. Ho hanyetsa mocheso o phahameng & ho tšoana ha mocheso

3. Ho lokileSiC e koahetsoeng ka kristalebakeng sa bokahodimo bo boreledi

4. High durability khahlanong le ho hloekisa lik'hemik'hale

CVD Epitaxial Deposition Ka Barrel Reactor

Lintlha tse ka Sehloohong tsaCVD-SIC Coating

SiC-CVD Properties
Sebopeho sa Crystal	FCC mohato oa β
Botenya	g/cm³	3.21
Ho thatafala	Vickers thata	2500
Boholo ba lijo-thollo	μm	2~10
Bohloeki ba Lik'hemik'hale	%	99.99995
Matla a Mocheso	J·kg-1 ·K-1	640
Sublimation Mocheso	℃	2700
Felexural Matla	MPa (RT 4-point)	415
Modulus e monyane	Gpa (4pt bend, 1300 ℃)	430
Katoloso ea Thermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300