CVD Silicon Carbide(SiC) Etching Ring ke karolo e khethehileng e entsoeng ka Silicon Carbide (SiC) e sebelisang mokhoa oa Chemical Vapor Deposition (CVD). CVD Silicon Carbide(SiC) Etching Ring e bapala karolo ea bohlokoa lits'ebetsong tse fapaneng tsa indasteri, haholo lits'ebetsong tse kenyelletsang ho hlophisoa ha thepa. Silicon Carbide ke thepa ea ceramic e ikhethang le e tsoetseng pele e tsejoang ka thepa ea eona e ikhethang, ho kenyelletsa le ho thatafala ho hoholo, ts'ebetso e ntle ea mocheso le ho hanyetsa tikoloho e thata ea lik'hemik'hale.
Ts'ebetso ea Chemical Vapor Deposition e kenyelletsa ho beha karolo e tšesaane ea SiC holim'a substrate tikolohong e laoloang, e hlahisang bohloeki bo phahameng le bo entsoeng ka nepo. CVD Silicon Carbide e tsebahala ka junifomo ea eona le microstructure e teteaneng, matla a matle a mochini le botsitso bo ntlafalitsoeng ba mocheso.
CVD Silicon Carbide(SiC) Etching Ring e entsoe ka CVD Silicon Carbide, e sa tiiseng feela ho tšoarella ho hoholo, empa hape e hanela ho bola ha lik'hemik'hale le liphetoho tse feteletseng tsa mocheso. Sena se etsa hore e be se loketseng bakeng sa lits'ebetso moo ho nepahala, ho ts'epahala le bophelo li leng bohlokoa.
✓Boleng ba boleng bo holimo 'marakeng oa China
✓Tšebeletso e ntle ho uena kamehla, lihora tse 7*24
✓Letsatsi le lekgutshwane la ho beleha
✓MOQ e nyane e amohelehile ebile e amohetsoe
✓Litšebeletso tse ikhethileng
Epitaxy Growth Susceptor
Li-wafers tsa silicon / silicon carbide li hloka ho feta lits'ebetsong tse ngata tse lokelang ho sebelisoa lisebelisoa tsa elektroniki. Ts'ebetso ea bohlokoa ke silicon / sic epitaxy, eo ho eona liphaephe tsa silicon / sic li tsamaisoang holim'a setsi sa graphite. Melemo e ikhethang ea Semicera's silicon carbide-coated graphite base e kenyelletsa bohloeki bo phahameng haholo, ho roala ka mokhoa o ts'oanang, le bophelo bo bolelele ba ts'ebeletso. Li boetse li na le khanyetso e phahameng ea lik'hemik'hale le botsitso ba mocheso.
Tlhahiso ea Chip ea LED
Nakong ea ho roala ho pharaletseng ha mochine oa MOCVD, setsi sa polanete kapa sejari se tsamaisa sephaphatha sa substrate. Ts'ebetso ea thepa ea motheo e na le tšusumetso e kholo holim'a boleng ba ho roala, e leng se amang sekhahla sa sekhechana sa chip. Semicera's silicon carbide-coated base e eketsa katleho ea tlhahiso ea li-wafers tsa boleng bo holimo tsa LED mme e fokotsa ho kheloha ha leqhubu. Re boetse re fana ka likarolo tse ling tsa graphite bakeng sa li-reactor tsohle tsa MOCVD tse ntseng li sebelisoa hona joale. Re ka apesa hoo e batlang e le karolo efe kapa efe ka silicon carbide coating, le haeba bophara ba karolo e fihla ho 1.5M, re ntse re ka apara ka silicon carbide.
Tšimo ea Semiconductor, Ts'ebetso ea Phallo ea Oxidation, jj.
Ts'ebetsong ea semiconductor, ts'ebetso ea katoloso ea oxidation e hloka bohloeki bo phahameng ba sehlahisoa, 'me ho Semicera re fana ka litšebeletso tsa ho roala tloaelo le CVD bakeng sa boholo ba likarolo tsa silicon carbide.
Setšoantšo se latelang se bontša silicon carbide slurry e entsoeng ka thata ea Semicea le tube ea silicon carbide sebōpi e hloekisitsoeng ka 100.0- boemoe hlokang lerolekamore. Basebetsi ba rona ba sebetsa pele ba roala. Bohloeki ba silicon carbide ea rona bo ka fihla ho 99.99%, 'me bohloeki ba ho roala sic bo feta 99.99995%.