Tsepamisa maikutloLesale la CVD SiCke lesale la silicon carbide (SiC) le lokiselitsoeng ke theknoloji ea Focus Chemical Vapor Deposition (Focus CVD).
Tsepamisa maikutloLesale la CVD SiCe na le litšobotsi tse ngata tse ntle tsa ts'ebetso. Ntlha ea pele, e na le boima bo phahameng, sebaka se phahameng sa ho qhibiliha le ho hanyetsa mocheso o phahameng haholo, 'me e ka boloka botsitso le botšepehi ba sebopeho tlas'a maemo a feteletseng a mocheso. Ea bobeli, FocusLesale la CVD SiCe na le botsitso bo botle ba lik'hemik'hale le ho hanyetsa kutu, 'me e na le khanyetso e phahameng ea mecha ea litaba e senyang joalo ka acid le alkalis. Ho phaella moo, e boetse e na le conductivity e babatsehang ea mocheso le matla a mochine, a loketseng litlhoko tsa kopo ka mocheso o phahameng, khatello e phahameng le libaka tse senyang.
Tsepamisa maikutloLesale la CVD SiCe sebelisoa haholo mafapheng a mangata. Hangata e sebelisoa bakeng sa ho itšehla thajana le lisebelisoa tsa ts'ireletso tsa lisebelisoa tsa mocheso o phahameng, joalo ka libopi tsa mocheso o phahameng, lisebelisoa tsa vacuum le li-reactor tsa lik'hemik'hale. Ho feta moo, FocusLesale la CVD SiCe ka boela ea sebelisoa ho optoelectronics, tlhahiso ea semiconductor, mechine e nepahetseng le sebaka sa sefofane, ho fana ka mamello e phahameng ea ts'ebetso ea tikoloho le ho tšepahala.
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✓Tšebeletso e ntle ho uena kamehla, lihora tse 7*24
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✓MOQ e nyane e amohelehile ebile e amohetsoe
✓Litšebeletso tse ikhethileng
Epitaxy Growth Susceptor
Li-wafers tsa silicon / silicon carbide li hloka ho feta lits'ebetsong tse ngata tse lokelang ho sebelisoa lisebelisoa tsa elektroniki. Ts'ebetso ea bohlokoa ke silicon / sic epitaxy, eo ho eona liphaephe tsa silicon / sic li tsamaisoang holim'a setsi sa graphite. Melemo e ikhethang ea Semicera's silicon carbide-coated graphite base e kenyelletsa bohloeki bo phahameng haholo, ho roala ka mokhoa o ts'oanang, le bophelo bo bolelele ba ts'ebeletso. Li boetse li na le khanyetso e phahameng ea lik'hemik'hale le botsitso ba mocheso.
Tlhahiso ea Chip ea LED
Nakong ea ho roala ho pharaletseng ha mochine oa MOCVD, setsi sa polanete kapa sejari se tsamaisa sephaphatha sa substrate. Ts'ebetso ea thepa ea motheo e na le tšusumetso e kholo holim'a boleng ba ho roala, e leng se amang sekhahla sa sekhechana sa chip. Semicera's silicon carbide-coated base e eketsa katleho ea tlhahiso ea li-wafers tsa boleng bo holimo tsa LED mme e fokotsa ho kheloha ha leqhubu. Re boetse re fana ka likarolo tse ling tsa graphite bakeng sa li-reactor tsohle tsa MOCVD tse ntseng li sebelisoa hona joale. Re ka apesa hoo e batlang e le karolo efe kapa efe ka silicon carbide coating, le haeba bophara ba karolo e fihla ho 1.5M, re ntse re ka apara ka silicon carbide.
Tšimo ea Semiconductor, Ts'ebetso ea Phallo ea Oxidation, jj.
Ts'ebetsong ea semiconductor, ts'ebetso ea katoloso ea oxidation e hloka bohloeki bo phahameng ba sehlahisoa, 'me ho Semicera re fana ka litšebeletso tsa ho roala tloaelo le CVD bakeng sa boholo ba likarolo tsa silicon carbide.
Setšoantšo se latelang se bontša silicon carbide slurry e entsoeng ka thata ea Semicea le tube ea silicon carbide sebōpi e hloekisitsoeng ka 100.0- boemoe hlokang lerolekamore. Basebetsi ba rona ba sebetsa pele ba roala. Bohloeki ba silicon carbide ea rona bo ka fihla ho 99.99%, 'me bohloeki ba ho roala sic bo feta 99.99995%..