Semicera e hlahisa semiconductor ea boleng bo holimosilicon carbide cantilever paddles, e etselitsoeng ho fihlela litlhoko tse thata tsa tlhahiso ea semiconductor ea sejoale-joale.
Thesekoahelo sa silicon carbidee na le moralo o tsoetseng pele o fokotsang katoloso ea mocheso le warping, e etsa hore e tšepahale haholo maemong a feteletseng. Kaho ea eona e matla e fana ka ts'ebetso e matlafalitsoeng, e fokotsang kotsi ea ho robeha kapa ho roala, e leng ntho ea bohlokoa ho boloka chai e ngata le boleng bo tsitsitseng ba tlhahiso. Thesekepe sa mapheoanamoralo o boetse o kopanya ka mokhoa o ts'oanelang le lisebelisoa tse tloaelehileng tsa ho lokisa semiconductor, ho netefatsa ho lumellana le ho sebelisoa habonolo.
E 'ngoe ea likarolo tse hlahelletseng tsa SemiceraSekepe sa SiCke khanyetso ea eona ea lik'hemik'hale, e e lumellang ho sebetsa hantle ka mokhoa o ikhethang tikolohong e pepesehileng likhase tse senyang le lik'hemik'hale. Tsepamiso ea Semicera mabapi le ho itloaetsa e lumella litharollo tse hlophisitsoeng.
| Thepa ea 'mele ea Recrystallized Silicon Carbide | |
| Thepa | Boleng bo Tlwaelehileng |
| Mocheso oa ho sebetsa (°C) | 1600°C (ka oksijene), 1700°C (ho fokotsa tikoloho) |
| Likahare tsa SiC | 99.96% |
| Free Si content | <0.1% |
| Boima ba bongata | 2.60-2.70 g/cm3 |
| porosity e bonahalang | <16% |
| Matla a ho hatella | > 600 MPa |
| Matla a ho kobeha a batang | 80-90 MPa (20°C) |
| Matla a ho kobeha a chesang | 90-100 MPa (1400°C) |
| Katoloso ea mocheso @1500°C | 4.70 10-6/°C |
| Thermal conductivity @1200°C | 23 W/m•K |
| Elastic modulus | 240 GPA |
| Ho hanyetsa mocheso oa mocheso | E ntle haholo |
