Seketsoana se seholo sa silicon carbide wafer se nang le boholo bo boholo

Tlhaloso e Khutšoanyane:

Semicera Energy Technology Co., Ltd. ke khoebo ea theknoloji e phahameng e thehiloeng Chaena, Re indasteri ea phepelo ea Semiconductor e nchafalitsoeng ka silicon carbide crystal boat nufacturer le mofani oa thepa.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Thepa ea recrystallized silicon carbide

Recrystallized silicon carbide (R-SiC) ke sesebelisoa se sebetsang hantle se nang le boima ba bobeli ho daemane, se entsoeng ka mocheso o phahameng ka holimo ho 2000 ℃. E na le lisebelisoa tse ngata tse ntle tsa SiC, joalo ka matla a mocheso o phahameng, khanyetso e matla ea kutu, khanyetso e ntle ea oxidation, ho hanyetsa mocheso o motle joalo-joalo.

● Lintho tse entsoeng ka bokhabane. Recrystallized silicon carbide e na le matla a phahameng le ho satalla ho feta carbon fiber, khanyetso e matla, e ka bapala ts'ebetso e ntle maemong a mocheso o feteletseng, e ka bapala ts'ebetso e ntle ea ho hanyetsa maemong a fapaneng. Ho phaella moo, e boetse e na le ho feto-fetoha ha maemo hantle 'me ha e senyehe habonolo ka ho otlolla le ho koba, e leng ho ntlafatsang haholo ts'ebetso ea eona.

● Ho hanyetsa ho bola ho hoholo. Recrystallized silicon carbide e na le khanyetso e phahameng ea kutu ho mefuta e fapaneng ea mecha ea litaba, e ka thibela khoholeho ea mefuta e mengata ea mecha ea phatlalatso e senyang, e ka boloka thepa ea eona ea mechine ka nako e telele, e na le ho khomarela ka matla, e le hore e be le bophelo bo bolelele ba tšebeletso. Ho phaella moo, e boetse e na le botsitso bo botle ba mocheso, e ka ikamahanya le mefuta e itseng ea liphetoho tsa mocheso, e ntlafatsa phello ea eona ea kopo.

● Sintering ha e fokotsehe. Hobane ts'ebetso ea sintering ha e fokotsehe, ha ho khatello e setseng e tla baka deformation kapa ho phunyeha ha sehlahisoa, 'me likarolo tse nang le libopeho tse rarahaneng le ho nepahala ho phahameng li ka lokisoa.

Litekanyetso tsa Tekheniki:

图片2

Lethathamo la Boitsebiso

材料Material

R-SiC

使用温度Mocheso o sebetsang (°C)

1600°C (氧化气氛Tikoloho ea oxidizing)

1700°C (还原气氛Ho fokotsa tikoloho)

SiC含量Likahare tsa SiC (%)

> 99

自由Si含量Likahare tsa Si mahala (%)

<0.1

体积密度Boima ba bongata (g/cm3)

2.60-2,70

气孔率Ho bonahala porosity (%)

<16

抗压强度Matla a sithabetsang (MPa)

> 600

常温抗弯强度Matla a ho kobeha a batang (MPa)

80-90 (20°C)

高温抗弯强度Matla a ho kobeha a chesang (MPa)

90-100 (1400°C)

热膨胀系数

Coefficient ea ho eketsa mocheso @1500°C (10-6/°C)

4.70

导热系数Thermal conductivity @1200°C (W/mK)

23

杨氏模量Elastic modulus (GPA)

240

抗热震性Ho hanyetsa mocheso oa mocheso

很好E ntle haholo

Sekepe sa silicon carbide crystal (2)
Sekepe sa silicon carbide crystal (3)
Sekepe sa silicon carbide crystal (4)
Sekepe sa Silicon Carbide Wafer (5)
Sekepe sa Silicon Carbide Wafer (4)
Semicera Sebaka sa mosebetsi
Sebaka sa mosebetsi sa Semicera 2
Mochini oa lisebelisoa
Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD
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