LiNbO3 Bonding sephaphatha

Tlhaloso e Khutšoanyane:

Lithium niobate crystal e na le lisebelisoa tse ntle haholo tsa electro-optical, acousto-optical, piezoelectric, le tse sa tloaelehang. Lithium niobate kristale ke kristale ea bohlokoa e sebetsang ka bongata e nang le thepa e ntle e sa tloaelehang ea optical le coefficient e kholo e sa tloaelehang ea optical; e ka boela ea finyella ho lumellana ha mekhahlelo e seng ea bohlokoa. Joaloka kristale ea electro-optical, e 'nile ea sebelisoa e le thepa ea bohlokoa ea optical waveguide; e le kristale ea piezoelectric, e ka sebelisoa ho etsa li-filters tsa SAW tse mahareng le tse tlaase, li-transducers tse nang le matla a phahameng a mocheso a phahameng a mocheso, joalo-joalo.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicera's LiNbO3 Bonding Wafer e etselitsoe ho fihlela litlhoko tse phahameng tsa tlhahiso e tsoetseng pele ea semiconductor. Ka thepa ea eona e ikhethang, e kenyelletsang ho hanyetsa ho apara ka mokhoa o phahameng, botsitso bo phahameng ba mocheso, le bohloeki bo ikhethang, sephaphatha sena se loketse ho sebelisoa lits'ebetsong tse hlokang ts'ebetso e nepahetseng le e tšoarellang nako e telele.

Lefapheng la semiconductor, LiNbO3 Bonding Wafers hangata li sebelisoa bakeng sa ho kopanya likarolo tse tšesaane ho lisebelisoa tsa optoelectronic, li-sensor le li-IC tse tsoetseng pele. Li bohlokoa ka ho khetheha ho photonics le MEMS (Micro-Electromechanical Systems) ka lebaka la thepa ea bona e babatsehang ea dielectric le bokhoni ba ho mamella maemo a thata a ts'ebetso. Semicera's LiNbO3 Bonding Wafer e etselitsoe ho ts'ehetsa maqhama a nepahetseng, ho ntlafatsa ts'ebetso le ts'epahalo ea lisebelisoa tsa semiconductor.

Thermal le thepa ea motlakase ea LiNbO3
Sebaka se qhibilihang	1250 ℃
Mocheso oa curie	1140 ℃
Thermal conductivity	38 W/m/K @ 25 ℃
Coefficient ea katoloso ea mocheso (@ 25°C)	//a, 2.0×10^-6/K //c, 2.2×10^-6/K
Ho hanyetsa	2×10^-6Ω·cm @ 200 ℃
Dielectric kamehla	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
Piezoelectric kamehla	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Electro-optic coefficient	γT₃₃=32 pm/V, γS₃₃=31 pm/V, γT₃₁=10 pm/V, γS₃₁=8.6 pm/V, γT₂₂=6.8 pm/V, γS₂₂=3.4 pm/V,
Half-wave voltage, DC Sebaka sa motlakase // z, leseli ⊥ Z; Sebaka sa motlakase // x kapa y, leseli ⊥ z	3.03 KV 4.02 KV

E entsoe ka thepa ea boleng bo holimo, LiNbO3 Bonding Wafer e netefatsa ho ts'epahala ho ts'epahalang le tlas'a maemo a feteletseng. Botsitso ba eona bo phahameng ba mocheso bo etsa hore e tšoanelehe ka ho khetheha bakeng sa libaka tse amanang le mocheso o phahameng, joalo ka tse fumanoang lits'ebetsong tsa semiconductor epitaxy. Ntle le moo, bohloeki bo phahameng ba semiconductor bo netefatsa tšilafalo e fokolang, e leng se etsang hore e be khetho e tšepahalang bakeng sa lits'ebetso tsa bohlokoa tsa semiconductor.

Ho Semicera, re ikemiselitse ho fana ka litharollo tse etellang pele indastering. LiNbO3 Bonding Wafer ea rona e fana ka ts'ebetso e tšoarellang e ke keng ea lekanngoa le bokhoni ba ts'ebetso e phahameng bakeng sa lits'ebetso tse hlokang bohloeki bo phahameng, ho hanyetsa ho roala, le botsitso ba mocheso. Ebang ke bakeng sa tlhahiso e tsoetseng pele ea semiconductor kapa mahlale a mang a ikhethang, sephaphatha sena se sebetsa e le karolo ea bohlokoa bakeng sa tlhahiso ea lisebelisoa tse tsoetseng pele.