Bophelo bo Bolelele ba Bophelo SiC Coated Graphite Carrier For Solar Wafer

Tlhaloso e Khutšoanyane:

Silicon carbide ke mofuta o mocha oa li-ceramics tse nang le ts'ebetso ea theko e phahameng le thepa e ntle ea thepa. Ka lebaka la likarolo tse kang matla a phahameng le ho thatafala, ho hanyetsa mocheso o phahameng, mocheso o moholo oa mocheso le khanyetso ea ho bola ha lik'hemik'hale, Silicon Carbide e batla e khona ho mamella mefuta eohle ea lik'hemik'hale. Ka hona, SiC e sebelisoa haholo merafong ea oli, lik'hemik'hale, mechine le sefofane, esita le matla a nyutlelie le sesole li na le litlhoko tsa tsona tse khethehileng ho SIC. Lisebelisoa tse ling tse tloaelehileng tseo re ka fanang ka tsona ke mehele ea tiiso bakeng sa pompo, valve le lihlomo tse sireletsang joalo-joalo.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Melemo

Ho hanyetsa mocheso o phahameng oa oxidation
E babatsehang Corrosion resistance
Khahlano e ntle ea Abrasion
High coefficient ea mocheso conductivity
Ho itšehla thajana, boima bo tlase
Boima bo phahameng
Moralo o hlophisitsoeng.

HGF (2)
HGF (1)

Lisebelisoa

- Tšimo e hananang le ho roala: sehlahla, poleiti, nozzle ea sandblasting, lesela la leholiotsoana, moqomo oa ho sila, joalo-joalo ...
-High Temperature Field: siC Slab, Quenching Furnace Tube, Radiant Tube,crucible, Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC sekepe, Kiln car Structure, Setter, joalo-joalo.
-Silicon Carbide Semiconductor: Seketsoana sa SiC wafer, sic chuck, sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway, joalo-joalo.
-Silicon Carbide Seal Field: mefuta eohle ea selikalikoe sa ho tiisa, ho beha, ho bushing, joalo-joalo.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, joalo-joalo.
- Tšimo ea betri ea lithium

LEHLABA (1)

LEHLABA (2)

Thepa ea 'Mele ea SiC

Thepa Boleng Mokhoa
Botenya 3.21 g/cc Sink-float le dimension
Mocheso o khethehileng 0.66 J/g °K Pulsed laser flash
Matla a flexural 450 MPa560 MPa 4 ntlha e kobehang, RT4 ntlha e kobehang, 1300 °
Ho robeha ho thata 2,94 MPa m1/2 Microindentation
Ho thatafala 2800 Vicker's, boima ba 500g
Elastic ModulusYoung's Modulus 450 GPA430 GPA 4 pt koba, RT4 pt kobeha, 1300 °C
Boholo ba lijo-thollo 2 - 10 µm SEM

Thermal Properties of SiC

Thermal Conductivity 250 W/m °K Mokhoa oa laser flash, RT
Katoloso ea Thermal (CTE) 4.5 x 10-6 °K Mocheso oa kamore ho fihlela ho 950 °C, dilatometer ea silika

Tekheniki Parameters

Ntho Yuniti Lintlha
RBSiC(SiSiC) NBSiC SSiC RSiC OSiC
Likahare tsa SiC % 85 75 99 99.9 ≥99
Likahare tsa silicon mahala % 15 0 0 0 0
Mocheso o moholo oa tšebeletso 1380 1450 1650 1620 1400
Botenya g/cm3 3.02 2.75-2,85 3.08-3.16 2.65-2,75 2.75-2,85
Porosity e bulehileng % 0 13-15 0 15-18 7-8
Matla a ho koba 20 ℃ 'Mpa 250 160 380 100 /
Matla a ho koba 1200 ℃ 'Mpa 280 180 400 120 /
Modulus ea elasticity 20 ℃ GPA 330 580 420 240 /
Modulus ea elasticity 1200 ℃ GPA 300 / / 200 /
Thermal conductivity 1200 ℃ W/mK 45 19.6 100-120 36.6 /
Coefficient ea katoloso ea mocheso K-1X10-6 4.5 4.7 4.1 4.69 /
HV Kg/mm2 2115 / 2800 / /

CVD silicon carbide coating holim'a bokantle ba silicon carbide ceramic dihlahiswa ka fihla bohloeki ho feta 99.9999% ho finyella litlhoko tsa bareki ka indasteri semiconductor.

Semicera Sebaka sa mosebetsi
Sebaka sa mosebetsi sa Semicera 2
Mochini oa lisebelisoa
Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD
Tshebeletso ya rona

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