CVD Bulk Silicon Carbide (SiC)
Kakaretso:CVDsilicon carbide e ngata (SiC)ke lisebelisoa tse batloang haholo ho lisebelisoa tsa plasma etching, li-application tsa lebelo la mocheso (RTP), le mekhoa e meng ea tlhahiso ea semiconductor. Mechini ea eona e ikhethang, ea lik'hemik'hale le ea mocheso e etsa hore e be sesebelisoa se loketseng lisebelisoa tsa theknoloji e tsoetseng pele tse hlokang ho nepahala le ho tšoarella nako e telele.
Lisebelisoa tsa CVD Bulk SiC:Bulk SiC e bohlokoa indastering ea semiconductor, haholo lits'ebetsong tsa plasma etching, moo likarolo tse kang mehele e tsepamisitsoeng, lishaoara tsa khase, mehele e ka thōko, le li-platens li ruang molemo ho tsoa ho matla a matla a ho hanyetsa ha SiC le ho tsamaisa mocheso. Tšebeliso ea eona e fetela hoRTPlitsamaiso ka lebaka la bokhoni ba SiC ba ho mamella ho fetoha ha mocheso ka potlako ntle le ho senyeha ho hoholo.
Ntle le lisebelisoa tsa etching, CVDboholo ba SiCe ratoa ka har'a libono tsa ho hasana le mekhoa ea ho hōla ha kristale, moo ho hlokahalang botsitso bo phahameng ba mocheso le ho hanyetsa lik'hemik'hale tse thata. Litšobotsi tsena li etsa hore SiC e be thepa ea khetho bakeng sa lits'ebetso tse batloang haholo tse kenyelletsang mocheso o phahameng le likhase tse senyang, joalo ka tse nang le chlorine le fluorine.
Melemo ea CVD Bulk SiC Components:
•Tekano e Phahameng:Ka boima ba 3.2 g/cm³,CVD boholo ba SiClikarolo li hanyetsa haholo ho apara le ts'ebetso ea mechine.
•Superior Thermal Conductivity:E fana ka conductivity ea mocheso ea 300 W/m·K, SiC e ngata e laola mocheso ka katleho, e etsa hore e be e loketseng bakeng sa likarolo tse pepesehileng ho potoloha ho feteletseng ha mocheso.
•Ho Ikemela ha Lik'hemik'hale:Reactivity e tlase ea SiC e nang le likhase tse etching, ho kenyeletsoa chlorine le lik'hemik'hale tse thehiloeng ho fluorine, e netefatsa bophelo ba karolo e telele.
•Adjustable Resistivity: CVD boholo ba SiC'sResistivity e ka etsoa ka har'a mefuta e fapaneng ea 10⁻²–10⁴ Ω-cm, e etsa hore e lumellane le litlhoko tse khethehileng tsa tlhahiso ea etching le semiconductor.
•Katoloso ea Thermal Coefficient:E nang le coefficient ea ho atolosa mocheso ea 4.8 x 10⁻⁶/°C (25–1000°C), CVD bulk SiC e hanyetsa mocheso oa mocheso, e boloka botsitso ba dimensional esita le nakong ea mocheso o potlakileng le oa ho pholisa.
•Ho tšoarella ho Plasma:Ho pepesehela plasma le likhase tse sebetsang ka thata ho ke keng ha qojoa lits'ebetsong tsa semiconductor, empaCVD boholo ba SiCe fana ka khanyetso e phahameng ea ho bola le ho senyeha, ho fokotsa makhetlo a mangata le litšenyehelo tsa tlhokomelo ka kakaretso.
Litlhaloso tsa Tekheniki:
•Diameter:E kholo ho feta 305 mm
•Resistivity:E ka feto-fetoha ka har'a 10⁻²–10⁴ Ω-cm
•Tekano:3.2 g/cm³
•Thermal Conductivity:300 W/m·K
•Katoloso ea Thermal Coefficient:4.8 x 10⁻⁶/°C (25–1000°C)
Ho Itloaetsa le ho Fetola maemo:HoSemiconductor ea semicera, rea utloisisa hore ts'ebeliso e 'ngoe le e' ngoe ea semiconductor e ka hloka litlhaloso tse fapaneng. Ke ka lebaka leo likarolo tsa rona tsa CVD tse ngata tsa SiC li ka khonehang ka botlalo, li na le matla a feto-fetohang le litekanyo tse lokiselitsoeng ho lumellana le litlhoko tsa lisebelisoa tsa hau. Hore na o ntse o ntlafatsa lisebelisoa tsa hau tsa plasma etching kapa o batla likarolo tse tšoarellang ho RTP kapa lits'ebetso tsa phallo, CVD ea rona SiC e fana ka ts'ebetso e ke keng ea bapisoa.
