SemiceraSiC Cantilever Wafer Paddlee etselitsoe ho fihlela litlhoko tsa tlhahiso ea semiconductor ea sejoale-joale. Senasephaphathae fana ka matla a matla a mochini le ho hanyetsa mocheso, e leng habohlokoa bakeng sa ho sebetsana le li-wafers libakeng tse phahameng tsa mocheso.
Sebopeho sa cantilever sa SiC se nolofalletsa ho behoa ka mokhoa o nepahetseng, ho fokotsa kotsi ea tšenyo nakong ea ts'ebetso. Ts'ebetso ea eona e phahameng ea mocheso e tiisa hore sephaphatha se lula se tsitsitse esita le tlas'a maemo a feteletseng, e leng sa bohlokoa bakeng sa ho boloka katleho ea tlhahiso.
Ntle le melemo ea eona ea sebopeho, Semicera'sSiC Cantilever Wafer Paddlee boetse e fana ka melemo ea boima ba 'mele le ho tšoarella. Mohaho o bobebe o etsa hore ho be bonolo ho sebetsana le ho kenyeletsoa lits'ebetsong tse teng, ha thepa ea SiC e phahameng e tiisa hore e tšoarella ka nako e telele tlas'a maemo a boima.
| Thepa ea 'mele ea Recrystallized Silicon Carbide | |
| Thepa | Boleng bo Tlwaelehileng |
| Mocheso oa ho sebetsa (°C) | 1600°C (ka oksijene), 1700°C (ho fokotsa tikoloho) |
| Likahare tsa SiC | 99.96% |
| Free Si content | <0.1% |
| Boima ba bongata | 2.60-2.70 g/cm3 |
| porosity e bonahalang | <16% |
| Matla a ho hatella | > 600 MPa |
| Matla a ho kobeha a batang | 80-90 MPa (20°C) |
| Matla a ho kobeha a chesang | 90-100 MPa (1400°C) |
| Katoloso ea mocheso @1500°C | 4.70 10-6/°C |
| Thermal conductivity @1200°C | 23 W/m•K |
| Modulase oa elastic | 240 GPA |
| Ho hanyetsa mocheso oa mocheso | E ntle haholo |
