Semicera's 4 Inch N-mofuta oa SiC Substrates e etselitsoe ho kopana le maemo a nepahetseng a indasteri ea semiconductor. Li-substrates tsena li fana ka motheo oa ts'ebetso e phahameng bakeng sa mefuta e mengata ea lisebelisoa tsa elektronike, tse fanang ka conductivity e ikhethang le thepa ea mocheso.
Li-doping tsa mofuta oa N tsa li-substrates tsena tsa SiC li matlafatsa tsamaiso ea tsona ea motlakase, e leng ho li etsang hore li tšoanelehe ka ho khetheha bakeng sa lisebelisoa tse matla le tse phahameng. Thepa ena e lumella lisebelisoa tse sebetsang hantle tse kang diode, transistors le amplifiers, moo ho fokotsang tahlehelo ea matla ho leng bohlokoa.
Semicera e sebelisa mekhoa ea morao-rao ea ho etsa lihlahisoa ho etsa bonnete ba hore karolo e 'ngoe le e' ngoe ea substrate e bonts'a boleng bo holimo le ho tšoana. Ho nepahala hona ho bohlokoa bakeng sa lits'ebetso tsa motlakase oa motlakase, lisebelisoa tsa microwave, le mahlale a mang a hlokang ts'ebetso e tšepahalang tlasa maemo a feteletseng.
Ho kenyelletsa likaroloana tsa Semicera tsa mofuta oa N-SiC moleng oa hau oa tlhahiso ho bolela ho rua molemo ho thepa e fanang ka phallo e phahameng ea mocheso le botsitso ba motlakase. Li-substrates tsena li nepahetse bakeng sa ho theha likarolo tse hlokang ho tšoarella le ho sebetsa hantle, joalo ka litsamaiso tsa phetolo ea matla le li-amplifiers tsa RF.
Ka ho khetha Semicera's 4 Inch N-type SiC Substrates, u tsetela ho sehlahisoa se kopanyang mahlale a mahlale a macha le boqapi bo hlokolosi. Semicera e ntse e tsoela pele ho etella pele indasteri ka ho fana ka litharollo tse tšehetsang nts'etsopele ea mahlale a morao-rao a semiconductor, ho netefatsa ts'ebetso e phahameng le ho ts'epahala.
| Lintho | Tlhahiso | Patlisiso | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
| Litekanyetso tsa Motlakase | |||
| Dopant | n-mofuta oa Nitrojene | ||
| Ho hanyetsa | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Botenya | 350±25 μm | ||
| Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
| Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
| Folete ea bobeli | Ha ho letho | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Sebopeho | |||
| Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
| Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Boleng ba Pele | |||
| Pele | Si | ||
| Qetello ea bokaholimo | Si-face CMP | ||
| Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
| Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
| Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
| Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
| Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
| Ho tšoaea ka laser ka pele | Ha ho letho | ||
| Boleng ba Morao | |||
| Qetello ea morao | C-sefahleho sa CMP | ||
| Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
| Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
| Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
| Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
| Qetello | |||
| Qetello | Chamfer | ||
| Sephutheloana | |||
| Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
| *Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. | |||
