Likhoele tsa SOI

Tlhaloso e Khutšoanyane:

Sephaphatha sa SOI ke sebopeho se kang sandwich se nang le likarolo tse tharo;Ho kenyeletsoa lera holimo (sesebediswa lera), bohareng ba e patoa oksijene lera (bakeng sa insulating SiO2 lera) le substrate tlase (ka bongata silicon).Li-wafers tsa SOI li hlahisoa ho sebelisoa mokhoa oa SIMOX le thekenoloji ea li-wafer bonding, e lumellang hore ho be le lisebelisoa tse tšesaane le tse nepahetseng haholoanyane, botenya bo lekanang le bofokoli bo tlaase.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

SOI Wafers(1)

Sebaka sa kopo

1. Potoloho e kopantsoeng ka lebelo le phahameng

2. Lisebelisoa tsa Microwave

3. Mocheso o phahameng oa potoloho o kopantsoeng

4. Lisebelisoa tsa matla

5. Potoloho e kopantsoeng ea matla a tlaase

6. MEMS

7. Motlakase o tlaase oa potoloho o kopantsoeng

Ntho		Khang
Ka kakaretso	Wafer Diameter 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Seqha/Serope 翘曲度(	<10um
	Likaroloana 颗粒度(	0.3um <30ea
	Flats/Notch 定位边/定位槽	Flat kapa Notch
	Kenyelletso ea Edge 边缘去除(mm)	/
Sesebelisoa sa Sesebelisoa 器件层	Mofuta oa Lera la Sesebelisoa / Dopant 器件层掺杂类型	Mofuta oa N/P-Mofuta B/ P/ Sb / Joalo ka
	Sesebediswa-lera Orientation 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Sesebediswa-lera Botenya 器件层厚度(um)	0.1 ~ 300um
	Sesebediswa-lera Resistivity 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Lisebelisoa tsa lera la lisebelisoa 器件层颗粒度(	<30ea@0.3
	Sesebelisoa sa Layer TTV 器件层TTV(	<10um
	Sesebediswa Layer Qetella 器件层表面处理	E bentšitsoe
LEKOBE	Botenya ba Oxide ea Thermal 埋氧层厚度(um)	50nm(500Å)~15um
Tšoara Lera 衬底	Tšoara mofuta oa Wafer / Dopant 衬底层类型	Mofuta oa N/P-Mofuta B/ P/ Sb / Joalo ka
	Tšoara Wafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Tšoara Wafer Resistivity 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Tšoara Botenya ba Wafer 衬底厚度(um)	> 100um
	Tšoara Wafer Qetella 衬底表面处理	E bentšitsoe
Li-wafers tsa SOI tsa litlhaloso tsa sepheo li ka etsoa ho latela litlhoko tsa bareki.