Li-Ingots tsa Semicera tsa 4”6” High Purity Semi-Insulating SiC Ingots li etselitsoe ho kopana le maemo a nepahetseng a indasteri ea semiconductor. Li-ingots tsena li hlahisoa ka ho tsepamisa maikutlo ho hloekileng le ho tsitsisa, ho etsa hore e be khetho e nepahetseng bakeng sa lisebelisoa tse matla le tse phahameng haholo moo ts'ebetso e leng ea bohlokoa.
Thepa e ikhethang ea li-ingots tsena tsa SiC, ho kenyelletsa le conductivity e phahameng ea mocheso le matla a matla a ho hanyetsa motlakase, li etsa hore li tšoanelehe ka ho khetheha bakeng sa tšebeliso ea matla a motlakase le lisebelisoa tsa microwave. Sebopeho sa bona sa semi-insulating se lumella mocheso o sebetsang hantle le tšitiso e fokolang ea motlakase, e lebisang ho likarolo tse sebetsang hantle le tse ka tšeptjoang.
Semicera e sebelisa mekhoa ea morao-rao ea ho hlahisa li-ingots tse nang le boleng bo ikhethang ba kristale le ho tšoana. Ho nepahala hona ho netefatsa hore ingot e 'ngoe le e' ngoe e ka sebelisoa ka mokhoa o ts'epahalang lits'ebetsong tse bobebe, joalo ka liamplifiers tsa maqhubu a holimo, li-laser diode, le lisebelisoa tse ling tsa optoelectronic.
E fumaneha ka boholo ba 4-inch le 6-inch, li-ingots tsa Semicera tsa SiC li fana ka phetoho e hlokahalang bakeng sa likala tse fapaneng tsa tlhahiso le litlhoko tsa theknoloji. Ebang ke tsa lipatlisiso le nts'etsopele kapa tlhahiso ea bongata, li-ingots tsena li fana ka ts'ebetso le nako e telele tseo litsamaiso tsa sejoale-joale tsa elektroniki li li hlokang.
Ka ho khetha Semicera's High Purity Semi-Insulating SiC Ingots, u tsetela ho sehlahisoa se kopanyang mahlale a tsoetseng pele a mahlale le boitseanape bo ke keng ba lekanngoa ba tlhahiso. Semicera e ikemiselitse ho ts'ehetsa boqapi le kholo ea indasteri ea semiconductor, e fana ka lisebelisoa tse nolofalletsang nts'etsopele ea lisebelisoa tsa elektroniki tse tsoetseng pele.
Lintho | Tlhahiso | Patlisiso | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
Litekanyetso tsa Motlakase | |||
Dopant | n-mofuta oa Nitrojene | ||
Ho hanyetsa | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Botenya | 350±25 μm | ||
Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
Folete ea bobeli | Ha ho letho | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Sebopeho | |||
Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Boleng ba Pele | |||
Pele | Si | ||
Qetello ea bokaholimo | Si-face CMP | ||
Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
Ho tšoaea ka laser ka pele | Ha ho letho | ||
Boleng ba Morao | |||
Qetello ea morao | C-sefahleho sa CMP | ||
Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
Qetello | |||
Qetello | Chamfer | ||
Sephutheloana | |||
Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. |