1.MabapiSilicon Carbide (SiC) Epitaxial Wafers
Silicon Carbide (SiC) epitaxial wafers e thehoa ka ho beha lesela le le leng la kristale holim'a lesela le sebelisa silicon carbide single crystal wafer e le substrate, hangata ka lik'hemik'hale tsa mouoane oa lik'hemik'hale (CVD). Har'a tsona, silicon carbide epitaxial e lokiselitsoe ka ho holisa silicon carbide epitaxial layer holim'a conductive silicon carbide substrate, 'me e tsoela pele ho etsoa lisebelisoa tse sebetsang hantle.
2.Silicon Carbide Epitaxial WaferLitlhaloso
Re ka fana ka 4, 6, 8 inches N-mofuta oa 4H-SiC epitaxial wafers. Epitaxial wafer e na le bandwidth e kholo, lebelo le phahameng la ho hoholeha ha elektronike, lebelo le phahameng la khase ea elektronike ea mahlakore a mabeli, le matla a maholo a ho senyeha ha tšimo. Lintho tsena li etsa hore sesebelisoa se be le mocheso o phahameng oa mocheso, ho hanyetsa mocheso o phahameng, lebelo la ho fetola ka potlako, ho hanyetsa ho tlaase, boholo bo fokolang le boima bo bobebe.
3. SiC Epitaxial Applications
SiC epitaxial wafere sebelisoa haholo ho Schottky diode (SBD), metal oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated heke bipolar transistor (IGBT), e sebelisoang masimong a matla a tlase, a mahareng le a matla a phahameng. Hona joale,SiC epitaxial wafersbakeng sa lisebelisoa tse phahameng tsa motlakase li boemong ba lipatlisiso le nts'etsopele lefatšeng ka bophara.
