Tlhaloso ea Sehlahisoa
4h-n 4inch 6inch dia100mm sic seed wafer 1mm botenya bakeng sa kholo ea ingot
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4 grade 4H-N 1.5mm SIC Wafers bakeng sa kristale ea peo
Mabapi le Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), eo hape e tsejoang e le carborundum, ke semiconductor e nang le silicon le carbon e nang le foromo ea lik'hemik'hale ea SiC.SiC e sebelisoa ho lisebelisoa tsa elektronike tsa semiconductor tse sebetsang ka mocheso o phahameng kapa mocheso o phahameng, kapa ka bobeli.SiC e boetse ke e 'ngoe ea likarolo tsa bohlokoa tsa LED, ke karolo e tummeng ea lisebelisoa tsa GaN tse ntseng li hōla,' me e boetse e sebetsa e le mochine o futhumatsang mocheso o phahameng-. matla a LED.
Tlhaloso
| Thepa | 4H-SiC, Crystal e le 'ngoe | 6H-SiC, Crystal e le 'ngoe |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Tatelano ya Stacking | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Botenya | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm.Katoloso Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | che = 2.61 | che = 2,60 |
| Dielectric Constant | hoo e ka bang 9.66 | hoo e ka bang 9.66 |
| Thermal Conductivity (Mofuta oa N, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Lekhalo la sehlopha | 3.23 eV | 3.02 eV |
| Tšimo ea Motlakase ea Senya | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
