Semicerae hlahisa850V Matla a Phahameng a GaN-on-Si Epi Wafer, khatelo-pele ea boqapi ba semiconductor. Epi wafer ena e tsoetseng pele e kopanya katleho e phahameng ea Gallium Nitride (GaN) le litšenyehelo tsa theko ea Silicon (Si), ho theha tharollo e matla bakeng sa lisebelisoa tse phahameng tsa motlakase.
Likarolo tsa Bohlokoa:
•Ho sebetsana le Voltage e Phahameng: E entsoe ho tšehetsa ho fihla ho 850V, GaN-on-Si Epi Wafer ena e loketse ho batla lisebelisoa tsa elektronike tse matla, tse nolofalletsang ho sebetsa hantle le ho sebetsa hantle.
•Matla a Matla a Matlafalitsoeng: Ka motsamao o phahameng oa elektronike le conductivity ea mocheso, theknoloji ea GaN e lumella meralo e kopanetsoeng le ho eketseha ha matla a matla.
•Tharollo e Sebeletsang Litšenyehelo: Ka ho sebelisa silicon e le karolo e ka tlaase, epi wafer ena e fana ka mefuta e meng e theko e tlaase ho feta liphaephe tse tloaelehileng tsa GaN, ntle le ho sekisetsa boleng kapa tshebetso.
•Phatlalatso e Pharalletseng ea Kopo: E nepahetse bakeng sa tšebeliso ea li-converter tsa matla, li-amplifiers tsa RF, le lisebelisoa tse ling tsa elektronike tse matla a phahameng, tse netefatsang ho tšepahala le ho tšoarella.
Lekola bokamoso ba theknoloji e phahameng haholo ka Semicera's850V Matla a Phahameng a GaN-on-Si Epi Wafer. E etselitsoe lits'ebetso tse tsoetseng pele, sehlahisoa sena se netefatsa hore lisebelisoa tsa hau tsa elektroniki li sebetsa ka katleho le ho ts'epahala. Khetha Semicera bakeng sa litlhoko tsa hau tsa semiconductor tsa moloko o latelang.
| Lintho | Tlhahiso | Patlisiso | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
| Litekanyetso tsa Motlakase | |||
| Dopant | n-mofuta oa Nitrojene | ||
| Ho hanyetsa | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Botenya | 350±25 μm | ||
| Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
| Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
| Folete ea bobeli | Ha ho letho | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Sebopeho | |||
| Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
| Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Boleng ba Pele | |||
| Pele | Si | ||
| Qetello ea bokaholimo | Si-face CMP | ||
| Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
| Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
| Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
| Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
| Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
| Ho tšoaea ka laser ka pele | Ha ho letho | ||
| Boleng ba Morao | |||
| Qetello ea morao | C-sefahleho sa CMP | ||
| Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
| Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
| Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
| Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
| Qetello | |||
| Qetello | Chamfer | ||
| Sephutheloana | |||
| Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
| *Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. | |||
