SiC Epitaxy

Tlhaloso e Khutšoanyane:

Semicera e fana ka filimi e tšesaane e tloaelehileng (silicon carbide) SiC epitaxy holim'a li-substrates bakeng sa nts'etsopele ea lisebelisoa tsa silicon carbide. Weitai e ikemiseditse ho fana ka dihlahiswa tsa boleng le ditheko tsa tlhodisano, mme re labalabela ho ba molekane wa hao wa nako e telele China.

 

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

SiC epitaxy (2)(1)

Tlhaloso ea Sehlahisoa

4h-n 4inch 6inch dia100mm sic seed wafer 1mm botenya bakeng sa kholo ea ingot

Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4 grade 4H-N 1.5mm SIC Wafers bakeng sa kristale ea peo

Mabapi le Silicon Carbide (SiC)Crystal

Silicon carbide (SiC), eo hape e tsejoang e le carborundum, ke semiconductor e nang le silicon le carbon e nang le foromo ea lik'hemik'hale ea SiC. SiC e sebelisoa ho lisebelisoa tsa elektronike tsa semiconductor tse sebetsang ka mocheso o phahameng kapa mocheso o phahameng, kapa ka bobeli.SiC e boetse ke e 'ngoe ea likarolo tsa bohlokoa tsa LED, ke karolo e tummeng ea lisebelisoa tsa GaN tse ntseng li hōla,' me e boetse e sebetsa e le mochine o futhumatsang mocheso o phahameng-. matla a LED.

Tlhaloso

Thepa

4H-SiC, Crystal e le 'ngoe

6H-SiC, Crystal e le 'ngoe

Lattice Parameters

a=3.076 Å c=10.053 Å

a=3.073 Å c=15.117 Å

Tatelano ya Stacking

ABCB

ABCACB

Mohs Hardness

≈9.2

≈9.2

Botenya

3.21 g/cm3

3.21 g/cm3

Therm. Katoloso Coefficient

4-5×10-6/K

4-5×10-6/K

Refraction Index @750nm

che = 2.61
ne = 2.66

che = 2.60
ne = 2.65

Dielectric Constant

hoo e ka bang 9.66

hoo e ka bang 9.66

Thermal Conductivity (Mofuta oa N, 0.02 ohm.cm)

a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K

 

Thermal Conductivity (Semi-insulating)

a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K

a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K

Lekhalo la sehlopha

3.23 eV

3.02 eV

Tšimo ea Motlakase ea Senya

3-5×106V/cm

3-5×106V/cm

Saturation Drift Velocity

2.0×105m/s

2.0×105m/s

Li-wafers tsa SiC

Semicera Sebaka sa mosebetsi Sebaka sa mosebetsi sa Semicera 2 Mochini oa lisebelisoa Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD Tshebeletso ya rona


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