Semiceraka boikhohomoso e hlahisa eona4" Gallium oxide Substrates, thepa ea motheo e entsoeng ho finyella litlhoko tse ntseng li eketseha tsa lisebelisoa tsa semiconductor tse sebetsang hantle haholo. Gallium oxide (Ga2O3) li-substrates li fana ka bandgap e pharalletseng haholo, e li etsang hore li tšoanelehe bakeng sa lisebelisoa tsa motlakase tsa moloko o latelang, li-optoelectronics tsa UV, le lisebelisoa tsa maqhubu a phahameng.
Likarolo tsa Bohlokoa:
• Ultra-Wide Bandgap: The4" Gallium oxide Substratesithorisa ka bandgap e ka bang 4.8 eV, e lumellang hore ho be le motlakase o ikhethang le mamello ea mocheso, e fetisang haholo lisebelisoa tsa setso tsa semiconductor joalo ka silicon.
•Motlakase o phahameng oa ho senya: Li-substrates tsena li nolofalletsa lisebelisoa hore li sebetse ka matla le matla a holimo, e leng se etsang hore li phethahale bakeng sa lisebelisoa tse phahameng tsa motlakase oa motlakase.
•Phahameng ka ho Fetisisa Thermal Stability: Li-substrates tsa Gallium Oxide li fana ka conductivity e ntle ea mocheso, e netefatsang ts'ebetso e tsitsitseng tlas'a maemo a feteletseng, e loketseng ho sebelisoa libakeng tse boima.
•Boleng bo Phahameng ba Lintho: Ka sekoli se tlase le boleng bo phahameng ba kristale, li-substrates tsena li netefatsa ts'ebetso e ts'epahalang le e tsitsitseng, e ntlafatsang ts'ebetso le ho tšoarella ha lisebelisoa tsa hau.
•Tšebeliso e fapaneng: E loketse mefuta e mengata ea likopo, ho kenyelletsa le li-transistors tsa matla, Schottky diode, le lisebelisoa tsa LED tsa UV-C, tse nolofalletsang mekhoa e mecha ka bobeli matla le matla a optoelectronic.
Lekola bokamoso ba theknoloji ea semiconductor ka Semicera's4" Gallium oxide Substrates. Li-substrates tsa rona li etselitsoe ho ts'ehetsa lits'ebetso tse tsoetseng pele ka ho fetesisa, ho fana ka ts'epahalo le ts'ebetso e hlokahalang bakeng sa lisebelisoa tsa morao-rao tse tsoetseng pele. Tšepa Semicera bakeng sa boleng le boqapi ho lisebelisoa tsa hau tsa semiconductor.
Lintho | Tlhahiso | Patlisiso | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
Litekanyetso tsa Motlakase | |||
Dopant | n-mofuta oa Nitrojene | ||
Ho hanyetsa | 0.015-0.025ohm · cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Botenya | 350±25 μm | ||
Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
Folete ea bobeli | Ha ho letho | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Sebopeho | |||
Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Boleng ba Pele | |||
Pele | Si | ||
Qetello ea bokaholimo | Si-face CMP | ||
Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
Ho tšoaea ka laser ka pele | Ha ho letho | ||
Boleng ba Morao | |||
Qetello ea morao | C-sefahleho sa CMP | ||
Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
Qetello | |||
Qetello | Chamfer | ||
Sephutheloana | |||
Sephutheloana | Epi e loketse ho paka ka vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. |