Gallium Nitride Substrates|GaN Wafers

Tlhaloso e Khutšoanyane:

Gallium nitride (GaN), joalo ka thepa ea silicon carbide (SiC), ke ea moloko oa boraro oa lisebelisoa tsa semiconductor tse nang le bophara ba lekhalo le leholo, le bophara ba lekhalo le leholo, conductivity e phahameng ea mocheso, sekhahla se phahameng sa ho falla ha elektronike, le tšimo e phahameng ea motlakase e senyehang. litšobotsi.Lisebelisoa tsa GaN li na le menyetla e mengata ea ts'ebeliso ka makhetlo a mangata, lebelo le phahameng le masimo a tlhokahalo ea matla a phahameng a kang mabone a pholosang matla a LED, pontšo ea laser projection, likoloi tse ncha tsa matla, marang-rang a bohlale, puisano ea 5G.

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Thepa ea semiconductor ea moloko oa boraro haholo-holo e kenyelletsa SiC, GaN, daemane, joalo-joalo, hobane bophara ba lekhalo la sehlopha sa eona (Mohlala) bo boholo ho feta kapa bo lekana le li-volts tsa 2.3 electron (eV), tse tsejoang hape e le lisebelisoa tse pharaletseng tsa lekhalo la semiconductor.Ha ho bapisoa le lisebelisoa tsa semiconductor tsa moloko oa pele le oa bobeli, lisebelisoa tsa semiconductor tsa moloko oa boraro li na le melemo ea ho tsamaisa mocheso o phahameng, motlakase o senyehang haholo, tekanyo e phahameng ea ho falla ha elektronike le matla a phahameng a ho kopanya, a ka finyellang litlhoko tse ncha tsa theknoloji ea morao-rao ea elektroniki bakeng sa boemo bo phahameng. mocheso, matla a phahameng, khatello e phahameng, maqhubu a phahameng le ho hanyetsa mahlaseli le maemo a mang a thata.E na le litebello tsa bohlokoa tsa ts'ebeliso maemong a ts'ireletso ea naha, sefofane, sefofane, tlhahlobo ea oli, polokelo ea mahlo, joalo-joalo, 'me e ka fokotsa tahlehelo ea matla ka ho feta 50% liindastering tse ngata tsa maano tse kang likhokahano tsa Broadband, matla a letsatsi, tlhahiso ea likoloi, mabone a semiconductor, le marang-rang a bohlale, 'me a ka fokotsa bophahamo ba thepa ka ho feta 75%, e leng ntho ea bohlokoahali bakeng sa nts'etsopele ea mahlale a batho le thekenoloji.

Ntho 项目	GaN-FS-CU-C50	GaN-FS-CN-C50	GaN-FS-C-SI-C50
Diameter 晶圆直径	50.8 ± 1 limilimithara
Botenya厚度	350 ± 25 μm
Boitloaelo 晶向	Sefofane sa C (0001) se theohile lehlakoreng la M-axis 0.35 ± 0.15°
Prime Flat 主定位边	(1-100) 0 ± 0.5 °, 16 ± 1 limilimithara
Sethala sa Bobeli 次定位边	(11-20) 0 ± 3 °, 8 ± 1 limilimithara
Boikhantšo 导电性	N-mofuta	N-mofuta	Semi-insulating
Resistivity (300K) 电阻率	<0.1 Ω·cm	<0.05 Ω·cm	> 106 Ω·cm
TTV 平整度	≤ 15 μm
KOBANE 弯曲度	≤ 20 μm
Ga Sefahleho Bokatlase Ga面粗糙度	<0.2 nm (e bentšitsoeng);
	kapa <0.3 nm (phekola e hloekisitsoeng le e holim'a metsi bakeng sa epitaxy)
N Bokhopo ba Sefahleho N面粗糙度	0.5 ~ 1,5 μm
	khetho: 1 ~ 3 nm (mobu o motle);<0.2 nm (e bentšitsoeng)
Dislocation Density 位错密度	Ho tloha ho 1 x 105 ho isa ho 3 x 106 cm-2 (e baloang ke CL)*
Macro Defect Density 缺陷密度	<2cm-2
Sebaka se Sebeletsang 有效面积	> 90% (ho qheleloa ka thoko le bokooa bo boholo)
E ka etsoa ho latela litlhoko tsa bareki, sebopeho se fapaneng sa silicon, safire, SiC based GaN epitaxial sheet.