Epitaxy ea Ga2O3

Tlhaloso e Khutšoanyane:

Ga2O3Epitaxy- Ntlafatsa lisebelisoa tsa hau tse matla tsa elektroniki le tsa optoelectronic ka Semicera's Ga2O3Epitaxy, e fanang ka ts'ebetso e ke keng ea lekanngoa le ho ts'epahala bakeng sa lits'ebetso tse tsoetseng pele tsa semiconductor.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicerae fana ka motlotloGa2O3Epitaxy, tharollo ea morao-rao e etselitsoeng ho sutumelletsa meeli ea matla a elektronike le optoelectronics. Theknoloji ena e tsoetseng pele ea epitaxial e sebelisa thepa e ikhethang ea Gallium Oxide (Ga2O3) ho fana ka ts'ebetso e phahameng ho likopo tse batlang.

Likarolo tsa Bohlokoa:

• Ikhethang Wide Bandgap: Ga2O3Epitaxye na le bandgap e pharalletseng haholo, e lumellang hore ho be le li-voltage tse phahameng haholo le ts'ebetso e sebetsang libakeng tse matla a phahameng.

High Thermal Conductivity: Lera la epitaxial le fana ka conductivity e babatsehang ea mocheso, ho netefatsa ts'ebetso e tsitsitseng esita le tlas'a maemo a phahameng a mocheso, ho etsa hore e be se loketseng bakeng sa lisebelisoa tse phahameng tsa maqhubu.

Boleng bo Phahameng ba Lintho: Finyella boleng bo phahameng ba kristale bo nang le mefokolo e fokolang, ho netefatsa ts'ebetso e nepahetseng ea sesebelisoa le bophelo bo bolelele, haholo lits'ebetsong tse mahlonoko tse kang li-transistors tsa matla le li-detectors tsa UV.

Mefuta-futa ea Likopo: E loketse ka ho feletseng bakeng sa lisebelisoa tsa elektronike tsa matla, lisebelisoa tsa RF, le optoelectronics, e fanang ka motheo o tšepahalang oa lisebelisoa tsa semiconductor tsa moloko o latelang.

 

Sibolla bokhoni baGa2O3Epitaxyka litharollo tse ncha tsa Semicera. Lihlahisoa tsa rona tsa epitaxial li etselitsoe ho finyella litekanyetso tse phahameng ka ho fetisisa tsa boleng le ts'ebetso, ho nolofalletsa lisebelisoa tsa hau ho sebetsa ka katleho e kholo le ho tšepahala. Khetha Semicera bakeng sa theknoloji ea semiconductor e tsoetseng pele.

Lintho

Tlhahiso

Patlisiso

Dummy

Crystal Parameters

Polytype

4H

Phoso ea ho shebana le bokaholimo

<11-20>4±0.15°

Litekanyetso tsa Motlakase

Dopant

n-mofuta oa Nitrojene

Ho hanyetsa

0.015-0.025ohm · cm

Mechanical Parameters

Diameter

150.0±0.2mm

Botenya

350±25 μm

Boemo ba mantlha bo bataletseng

[1-100]±5°

Bolelele ba pele bo bataletseng

47.5±1.5mm

Folete ea bobeli

Ha ho letho

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Inamela

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Sebopeho

Boima ba micropipe

<1 e/cm2

<10 e/cm2

<15 e/cm2

Litšila tsa tšepe

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Boleng ba Pele

Pele

Si

Qetello ea bokaholimo

Si-face CMP

Likaroloana

≤60ea/wafer (boholo ≥0.3μm)

NA

Mengwapo

≤5ea/mm. Bolelele ba kakaretso ≤Diameter

Bolelele bo akaretsang≤2*Diameter

NA

Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso

Ha ho letho

NA

Li-edge chips/indents/fracture/hex plates

Ha ho letho

Libaka tsa polytype

Ha ho letho

Kakaretso≤20%

Kakaretso≤30%

Ho tšoaea ka laser ka pele

Ha ho letho

Boleng ba Morao

Qetello ea morao

C-sefahleho sa CMP

Mengwapo

≤5ea/mm, bolelele bo akaretsang≤2* bophara

NA

Litšitiso tse ka morao (li-chips / indents)

Ha ho letho

Bokhopo ba mokokotlo

Ra≤0.2nm (5μm*5μm)

Ho tšoaea ka morao laser

1 mm (ho tloha pheletsong e ka holimo)

Qetello

Qetello

Chamfer

Sephutheloana

Sephutheloana

Epi-reading ka sephutheloana sa vacuum

Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata

*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD.

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Li-wafers tsa SiC

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