Epitaxy ea Ga2O3

Tlhaloso e Khutšoanyane:

Ga2O3Epitaxy- Ntlafatsa lisebelisoa tsa hau tse matla tsa elektroniki le tsa optoelectronic ka Semicera's Ga2O3Epitaxy, e fanang ka ts'ebetso e ke keng ea lekanngoa le ho ts'epahala bakeng sa lits'ebetso tse tsoetseng pele tsa semiconductor.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicerae fana ka motlotloGa2O3Epitaxy, tharollo ea morao-rao e etselitsoeng ho sutumelletsa meeli ea matla a elektronike le optoelectronics. Theknoloji ena e tsoetseng pele ea epitaxial e sebelisa thepa e ikhethang ea Gallium Oxide (Ga2O3) ho fana ka ts'ebetso e phahameng ho likopo tse batlang.

Likarolo tsa Bohlokoa:

• Ikhethang Wide Bandgap: Ga2O3Epitaxye na le bandgap e pharalletseng haholo, e lumellang hore ho be le li-voltage tse phahameng haholo le ts'ebetso e sebetsang libakeng tse matla a phahameng.

High Thermal Conductivity: Lera la epitaxial le fana ka conductivity e babatsehang ea mocheso, ho netefatsa ts'ebetso e tsitsitseng esita le tlas'a maemo a phahameng a mocheso, e leng se etsang hore e be se loketseng bakeng sa lisebelisoa tse phahameng tsa maqhubu.

Boleng bo Phahameng ba Lintho: Finyella boleng bo phahameng ba kristale bo nang le mefokolo e fokolang, ho netefatsa ts'ebetso e nepahetseng ea sesebelisoa le bophelo bo bolelele, haholo lits'ebetsong tse mahlonoko tse kang li-transistors tsa matla le li-detectors tsa UV.

Mefuta-futa ea Likopo: E loketse ka ho feletseng bakeng sa lisebelisoa tsa elektronike tsa matla, lisebelisoa tsa RF, le optoelectronics, e fanang ka motheo o tšepahalang oa lisebelisoa tsa semiconductor tsa moloko o latelang.

 

Fumana bokhoni ba hoGa2O3Epitaxyka litharollo tse ncha tsa Semicera. Lihlahisoa tsa rona tsa epitaxial li etselitsoe ho finyella litekanyetso tse phahameng ka ho fetisisa tsa boleng le ts'ebetso, e leng ho nolofalletsang lisebelisoa tsa hau ho sebetsa ka katleho e kholo le ho tšepahala. Khetha Semicera bakeng sa theknoloji ea semiconductor e tsoetseng pele.

Lintho

Tlhahiso

Patlisiso

Dummy

Crystal Parameters

Polytype

4H

Phoso ea ho shebana le bokaholimo

<11-20>4±0.15°

Litekanyetso tsa Motlakase

Dopant

n-mofuta oa Nitrojene

Ho hanyetsa

0.015-0.025ohm · cm

Mechanical Parameters

Diameter

150.0±0.2mm

Botenya

350±25 μm

Boemo ba mantlha bo bataletseng

[1-100]±5°

Bolelele ba pele bo bataletseng

47.5±1.5mm

Folete ea bobeli

Ha ho letho

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Inamela

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Sebopeho

Boima ba micropipe

<1 e/cm2

<10 e/cm2

<15 e/cm2

Litšila tsa tšepe

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Boleng ba Pele

Pele

Si

Qetello ea bokaholimo

Si-face CMP

Likaroloana

≤60ea/wafer (boholo ≥0.3μm)

NA

Mengwapo

≤5ea/mm. Bolelele ba kakaretso ≤Diameter

Bolelele bo akaretsang≤2*Diameter

NA

Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso

Ha ho letho

NA

Li-edge chips/indents/fracture/hex plates

Ha ho letho

Libaka tsa polytype

Ha ho letho

Kakaretso≤20%

Kakaretso≤30%

Ho tšoaea ka laser ka pele

Ha ho letho

Boleng ba Morao

Qetello ea morao

C-sefahleho sa CMP

Mengwapo

≤5ea/mm, bolelele bo akaretsang≤2* bophara

NA

Litšitiso tse ka morao (li-chips / indents)

Ha ho letho

Bokhopo ba mokokotlo

Ra≤0.2nm (5μm*5μm)

Ho tšoaea ka morao laser

1 mm (ho tloha pheletsong e ka holimo)

Qetello

Qetello

Chamfer

Sephutheloana

Sephutheloana

Epi e loketse ho paka ka vacuum

Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata

*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD.

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Li-wafers tsa SiC

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