Karolo e nyenyane ea Ga2O3

Tlhaloso e Khutšoanyane:

Ga2O3Substrate- Notlolla menyetla e mecha ea matla a elektroniki le li-optoelectronics ka Semicera's Ga2O3Substrate, e etselitsoe ts'ebetso e ikhethang lits'ebetsong tse nang le matla a holimo le a maqhubu a holimo.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Semicera e motlotlo ho hlahisaGa2O3Substrate, thepa e tsoetseng pele e malala-a-laotsoe ho fetola matla a elektronike le optoelectronics.Gallium oxide (Ga2O3) li-substrateli tsebahala ka li-bandgap tsa tsona tse pharalletseng haholo, e leng se etsang hore e be tse loketseng lisebelisoa tsa matla a holimo le a maqhubu a holimo.

 

Likarolo tsa Bohlokoa:

• Ultra-Wide Bandgap: Ga2O3 e fana ka bandgap e ka bang 4.8 eV, e matlafatsang haholo bokhoni ba eona ba ho sebetsana le maemo a phahameng le mocheso ha o bapisoa le lisebelisoa tsa setso tse kang Silicon le GaN.

• High Breakdown Voltage: Ka sebaka se ikhethang sa ho senyeha, theGa2O3Substratee nepahetse bakeng sa lisebelisoa tse hlokang ts'ebetso ea motlakase o phahameng, e netefatsang ts'ebetso e kholo le ho ts'epahala.

• Thermal Stability: Thepa e phahameng ea mocheso e tsitsitseng e etsa hore e tšoanelehe bakeng sa likopo maemong a feteletseng, ho boloka ts'ebetso esita le tlas'a maemo a thata.

• Lisebelisoa tse Fetohang: E ​​loketse ho sebelisoa ho li-transistors tsa matla a phahameng, lisebelisoa tsa UV optoelectronic, le tse ling, ho fana ka motheo o tiileng oa lisebelisoa tse tsoetseng pele tsa elektroniki.

 

Eba le bokamoso ba theknoloji ea semiconductor ka Semicera'sGa2O3Substrate. E etselitsoe ho khahlametsa litlhoko tse ntseng li hola tsa lisebelisoa tsa elektroniki tsa matla a holimo le a maqhubu a holimo, substrate ena e beha maemo a macha a ts'ebetso le ho tšoarella. Tšepa Semicera ho fana ka litharollo tse ncha bakeng sa lits'ebetso tsa hau tse thata ka ho fetisisa.

Lintho

Tlhahiso

Patlisiso

Dummy

Crystal Parameters

Polytype

4H

Phoso ea ho shebana le bokaholimo

<11-20>4±0.15°

Litekanyetso tsa Motlakase

Dopant

n-mofuta oa Nitrojene

Ho hanyetsa

0.015-0.025ohm · cm

Mechanical Parameters

Diameter

150.0±0.2mm

Botenya

350±25 μm

Boemo ba mantlha bo bataletseng

[1-100]±5°

Bolelele ba pele bo bataletseng

47.5±1.5mm

Folete ea bobeli

Ha ho letho

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Inamela

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Front(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Sebopeho

Boima ba micropipe

<1 e/cm2

<10 e/cm2

<15 e/cm2

Litšila tsa tšepe

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Boleng ba Pele

Pele

Si

Qetello ea bokaholimo

Si-face CMP

Likaroloana

≤60ea/wafer (boholo ≥0.3μm)

NA

Mengwapo

≤5ea/mm. Bolelele ba kakaretso ≤Diameter

Bolelele bo akaretsang≤2*Diameter

NA

Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso

Ha ho letho

NA

Li-edge chips/indents/fracture/hex plates

Ha ho letho

Libaka tsa polytype

Ha ho letho

Kakaretso≤20%

Kakaretso≤30%

Ho tšoaea ka laser ka pele

Ha ho letho

Boleng ba Morao

Qetello ea morao

C-sefahleho sa CMP

Mengwapo

≤5ea/mm, bolelele bo akaretsang≤2* bophara

NA

Litšitiso tse ka morao (li-chips / indents)

Ha ho letho

Bokhopo ba mokokotlo

Ra≤0.2nm (5μm*5μm)

Ho tšoaea ka morao laser

1 mm (ho tloha pheletsong e ka holimo)

Qetello

Qetello

Chamfer

Sephutheloana

Sephutheloana

Epi e loketse ho paka ka vacuum

Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata

*Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD.

tech_1_2_size
Li-wafers tsa SiC

  • E fetileng:
  • E 'ngoe: