Semicera e motlotlo ho hlahisaGa2O3Substrate, thepa e tsoetseng pele e malala-a-laotsoe ho fetola matla a elektronike le optoelectronics.Gallium oxide (Ga2O3) li-substrateli tsebahala ka li-bandgap tsa tsona tse pharalletseng haholo, e leng se etsang hore li tšoanelehe bakeng sa lisebelisoa tse matla le tse phahameng haholo.
Likarolo tsa Bohlokoa:
• Ultra-Wide Bandgap: Ga2O3 e fana ka bandgap e ka bang 4.8 eV, e matlafatsang haholo bokhoni ba eona ba ho sebetsana le maemo a phahameng le mocheso ha o bapisoa le lisebelisoa tsa setso tse kang Silicon le GaN.
• High Breakdown Voltage: Ka sebaka se ikhethang sa ho senyeha, theGa2O3Substratee nepahetse bakeng sa lisebelisoa tse hlokang ts'ebetso ea motlakase o phahameng, e netefatsang ts'ebetso e kholo le ho ts'epahala.
• Thermal Stability: Thepa e phahameng ea mocheso e tsitsitseng e etsa hore e tšoanelehe bakeng sa likopo maemong a feteletseng, ho boloka ts'ebetso esita le tlas'a maemo a thata.
• Lisebelisoa tse fapaneng: E loketse ho sebelisoa ho li-transistors tsa matla a phahameng, lisebelisoa tsa UV optoelectronic, le tse ling, ho fana ka motheo o tiileng bakeng sa litsamaiso tse tsoetseng pele tsa elektroniki.
Eba le bokamoso ba theknoloji ea semiconductor ka Semicera'sGa2O3Substrate. E etselitsoe ho khahlametsa litlhoko tse ntseng li hola tsa lisebelisoa tsa elektroniki tsa matla a holimo le a maqhubu a holimo, substrate ena e beha maemo a macha a ts'ebetso le ho tšoarella. Tšepa Semicera ho fana ka litharollo tse ncha bakeng sa lits'ebetso tsa hau tse thata ka ho fetisisa.
| Lintho | Tlhahiso | Patlisiso | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Phoso ea ho shebana le bokaholimo | <11-20>4±0.15° | ||
| Litekanyetso tsa Motlakase | |||
| Dopant | n-mofuta oa Nitrojene | ||
| Ho hanyetsa | 0.015-0.025ohm · cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Botenya | 350±25 μm | ||
| Boemo ba mantlha bo bataletseng | [1-100]±5° | ||
| Bolelele ba pele bo bataletseng | 47.5±1.5mm | ||
| Folete ea bobeli | Ha ho letho | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Inamela | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Front(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Sebopeho | |||
| Boima ba micropipe | <1 e/cm2 | <10 e/cm2 | <15 e/cm2 |
| Litšila tsa tšepe | ≤5E10atoms/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Boleng ba Pele | |||
| Pele | Si | ||
| Qetello ea bokaholimo | Si-face CMP | ||
| Likaroloana | ≤60ea/wafer (boholo ≥0.3μm) | NA | |
| Mengwapo | ≤5ea/mm. Bolelele ba kakaretso ≤Diameter | Bolelele bo akaretsang≤2*Diameter | NA |
| Lekhapetla la lamunu/makoti/matheba/maphatso/mapetso/tshilafatso | Ha ho letho | NA | |
| Li-edge chips/indents/fracture/hex plates | Ha ho letho | ||
| Libaka tsa polytype | Ha ho letho | Kakaretso≤20% | Kakaretso≤30% |
| Ho tšoaea ka laser ka pele | Ha ho letho | ||
| Boleng ba Morao | |||
| Qetello ea morao | C-sefahleho sa CMP | ||
| Mengwapo | ≤5ea/mm, bolelele bo akaretsang≤2* bophara | NA | |
| Litšitiso tse ka morao (li-chips / indents) | Ha ho letho | ||
| Bokhopo ba mokokotlo | Ra≤0.2nm (5μm*5μm) | ||
| Ho tšoaea ka morao laser | 1 mm (ho tloha pheletsong e ka holimo) | ||
| Qetello | |||
| Qetello | Chamfer | ||
| Sephutheloana | |||
| Sephutheloana | Epi-reading ka sephutheloana sa vacuum Sephutheloana sa lik'hasete tse nang le liphaephe tse ngata | ||
| *Lintlha: "NA" e bolela hore ha ho na kopo Lintho tse sa boleloang li ka lebisa ho SEMI-STD. | |||
