Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.
Lisebelisoa tsa SiC li na le melemo e ke keng ea nkeloa sebaka tšimong ea mocheso o phahameng, khatello e phahameng, maqhubu a phahameng, lisebelisoa tsa elektronike tse matla le lisebelisoa tse feteletseng tsa tikoloho tse kang sefofane, sesole, matla a nyutlelie, joalo-joalo, li etsa bakeng sa liphoso tsa lisebelisoa tsa setso tsa semiconductor ka mokhoa o sebetsang. likopo, 'me butle-butle li fetoha tse ka sehloohong tsa li-semiconductors tsa matla.
4H-SiC Silicon carbide substrate litlhaloso
Ntho项目 | Litlhaloso参数 | |
Polytype | 4H -SiC | 6H- SiC |
Diameter | 2 intshi | 3 intshi | 4 intshi | 6 intshi | 2 intshi | 3 intshi | 4 intshi | 6 intshi |
Botenya | 330 μm ~ 350 μm | 330 μm ~ 350 μm |
Boikhantšo | N – mofuta / Semi-insulating | N – mofuta / Semi-insulating |
Dopant | N2 ( Nitrogen) V ( Vanadium ) | N2 ( Nitrogen) V ( Vanadium ) |
Boitloaelo | Ka lehlakoreng le leng <0001> | Ka lehlakoreng le leng <0001> |
Ho hanyetsa | 0.015 ~ 0.03 ohm-cm | 0.02 ~ 0.1 ohm-cm |
Boima ba Micropipe (MPD) | ≤10/cm2 ~ ≤1/cm2 | ≤10/cm2 ~ ≤1/cm2 |
TTV | ≤ 15 μm | ≤ 15 μm |
Seqha / Warp | ≤25 μm | ≤25 μm |
Bokaholimo | DSP/SSP | DSP/SSP |
Kereiti | Tlhahiso / Sehlopha sa lipatlisiso | Tlhahiso / Sehlopha sa lipatlisiso |
Crystal Stacking Sequence | ABCB | ABCABC |
Letlapa la parameter | a=3.076A , c=10.053A | a=3.073A , c=15.117A |
Mohlala/eV(Band-gap) | 3.27 eV | 3.02 eV |
ε(Dielectric Constant) | 9.6 | 9.66 |
Index ea Refraction | n0 =2.719 ne =2.777 | n0 =2.707 , ne =2.755 |
6H-SiC Silicon Carbide substrate litlhaloso
Ntho项目 | Litlhaloso参数 |
Polytype | 6H-SiC |
Diameter | 4 intshi | 6 intshi |
Botenya | 350μm ~ 450μm |
Boikhantšo | N – mofuta / Semi-insulating |
Dopant | N2( Nitrogen) |
Boitloaelo | <0001> theoha 4°± 0.5° |
Ho hanyetsa | 0.02 ~ 0.1 ohm-cm |
Boima ba Micropipe (MPD) | ≤ 10/cm2 |
TTV | ≤ 15 μm |
Seqha / Warp | ≤25 μm |
Bokaholimo | Sefahleho: CMP, Epi-Ready |
Kereiti | Sehlopha sa lipatlisiso |