Silicon Carbide Substrates | SiC Wafers

Tlhaloso e Khutšoanyane:

Semicera Energy Technology Co., Ltd. ke morekisi ea itlhommeng pele ea ipabolang ka li-wafer le lisebelisoa tse tsoetseng pele tsa semiconductor. Re inehetse ho fana ka lihlahisoa tsa boleng bo holimo, tse tšepahalang le tse ncha ho tlhahiso ea semiconductor, indasteri ea photovoltaic le likarolo tse ling tse amanang le tsona.

Mohala oa rona oa lihlahisoa o kenyelletsa lihlahisoa tsa graphite tse koahetsoeng ke SiC / TaC le lihlahisoa tsa ceramic, tse kenyelletsang lisebelisoa tse fapaneng tse kang silicon carbide, silicon nitride, le aluminium oxide joalo-joalo.

Hajoale, ke rona feela moetsi ea fanang ka bohloeki 99.9999% SiC coating le 99.9% recrystallized silicon carbide. Bolelele bo phahameng ba ho roala SiC re ka bo etsa 2640mm.

 

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

SiC-Wafer

Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.

Lisebelisoa tsa SiC li na le melemo e ke keng ea nkeloa sebaka tšimong ea mocheso o phahameng, khatello e phahameng, maqhubu a phahameng, lisebelisoa tsa elektronike tse matla le lisebelisoa tse feteletseng tsa tikoloho tse kang sefofane, sesole, matla a nyutlelie, joalo-joalo, li etsa bakeng sa liphoso tsa lisebelisoa tsa setso tsa semiconductor ka mokhoa o sebetsang. likopo, 'me butle-butle li fetoha tse ka sehloohong tsa li-semiconductors tsa matla.

4H-SiC Silicon carbide substrate litlhaloso

Ntho项目

Litlhaloso参数

Polytype
晶型

4H -SiC

6H- SiC

Diameter
晶圆直径

2 intshi | 3 intshi | 4 intshi | 6 intshi

2 intshi | 3 intshi | 4 intshi | 6 intshi

Botenya
厚度

330 μm ~ 350 μm

330 μm ~ 350 μm

Boikhantšo
导电类型

N – mofuta / Semi-insulating
N型导电片/ 半绝缘片

N – mofuta / Semi-insulating
N型导电片/ 半绝缘片

Dopant
掺杂剂

N2 ( Nitrogen) V ( Vanadium )

N2 ( Nitrogen) V ( Vanadium )

Boitloaelo
晶向

Ka lehlakoreng le leng <0001>
Off axis <0001> theoha 4°

Ka lehlakoreng le leng <0001>
Off axis <0001> theoha 4°

Ho hanyetsa
电阻率

0.015 ~ 0.03 ohm-cm
(4H-N)

0.02 ~ 0.1 ohm-cm
(6H-N)

Boima ba Micropipe (MPD)
微管密度

≤10/cm2 ~ ≤1/cm2

≤10/cm2 ~ ≤1/cm2

TTV
总厚度变化

≤ 15 μm

≤ 15 μm

Seqha / Warp
翘曲度

≤25 μm

≤25 μm

Bokaholimo
表面处理

DSP/SSP

DSP/SSP

Kereiti
产品等级

Tlhahiso / Sehlopha sa lipatlisiso

Tlhahiso / Sehlopha sa lipatlisiso

Crystal Stacking Sequence
堆积方式

ABCB

ABCABC

Letlapa la parameter
晶格参数

a=3.076A , c=10.053A

a=3.073A , c=15.117A

Mohlala/eV(Band-gap)
禁带宽度

3.27 eV

3.02 eV

ε(Dielectric Constant)
介电常数

9.6

9.66

Index ea Refraction
折射率

n0 =2.719 ne =2.777

n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate litlhaloso

Ntho项目

Litlhaloso参数

Polytype
晶型

6H-SiC

Diameter
晶圆直径

4 intshi | 6 intshi

Botenya
厚度

350μm ~ 450μm

Boikhantšo
导电类型

N – mofuta / Semi-insulating
N型导电片/ 半绝缘片

Dopant
掺杂剂

N2( Nitrogen)
V ( Vanadium )

Boitloaelo
晶向

<0001> theoha 4°± 0.5°

Ho hanyetsa
电阻率

0.02 ~ 0.1 ohm-cm
(Mofuta oa 6H-N)

Boima ba Micropipe (MPD)
微管密度

≤ 10/cm2

TTV
总厚度变化

≤ 15 μm

Seqha / Warp
翘曲度

≤25 μm

Bokaholimo
表面处理

Sefahleho: CMP, Epi-Ready
C Sefahleho: Optical Polish

Kereiti
产品等级

Sehlopha sa lipatlisiso

Semicera Sebaka sa mosebetsi Sebaka sa mosebetsi sa Semicera 2 Mochini oa lisebelisoa Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD Tshebeletso ya rona


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