Silicon Carbide Substrates | SiC Wafers

Tlhaloso e Khutšoanyane:

WeiTai Energy Technology Co., Ltd. ke mofani oa thepa ea ka sehloohong ea sebetsanang le li-wafer le lisebelisoa tse tsoetseng pele tsa semiconductor.Re inehetse ho fana ka lihlahisoa tsa boleng bo holimo, tse tšepahalang le tse ncha ho tlhahiso ea semiconductor, indasteri ea photovoltaic le likarolo tse ling tse amanang le tsona.

Mohala oa rona oa lihlahisoa o kenyelletsa lihlahisoa tsa graphite tse koahetsoeng ke SiC / TaC le lihlahisoa tsa ceramic, tse kenyelletsang lisebelisoa tse fapaneng tse kang silicon carbide, silicon nitride, le aluminium oxide joalo-joalo.

Hajoale, ke rona feela moetsi ea fanang ka bohloeki 99.9999% SiC coating le 99.9% recrystallized silicon carbide.Bolelele bo phahameng ba ho roala SiC re ka bo etsa 2640mm.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide (SiC) thepa e le 'ngoe ea kristale e na le lekhalo le leholo la lekhalo la sehlopha (~ Si makhetlo a 3), conductivity e phahameng ea mocheso (~Si 3.3 linako kapa GaAs makhetlo a 10), tekanyo e phahameng ea ho falla ha elektronike (~ Si 2.5 linako), ho senyeha ho matla ha motlakase tšimo (~ Si 10 linako kapa GaAs 5 linako) le litšobotsi tse ling tse hlaheletseng.

Lisebelisoa tsa SiC li na le melemo e ke keng ea nkeloa sebaka tšimong ea mocheso o phahameng, khatello e phahameng, maqhubu a phahameng, lisebelisoa tsa elektronike tse matla le lisebelisoa tse feteletseng tsa tikoloho tse kang sefofane, sesole, matla a nyutlelie, joalo-joalo, li etsa bakeng sa liphoso tsa lisebelisoa tsa setso tsa semiconductor ka mokhoa o sebetsang. likopo, 'me butle-butle li fetoha tse ka sehloohong tsa li-semiconductors tsa matla.

4H-SiC Silicon carbide substrate litlhaloso

Ntho项目	Litlhaloso参数
Polytype 晶型	4H -SiC	6H- SiC
Diameter 晶圆直径	2 intshi \|3 intshi \|4 intshi \|6 intshi	2 intshi \|3 intshi \|4 intshi \|6 intshi
Botenya 厚度	330 μm ~ 350 μm	330 μm ~ 350 μm
Boikhantšo 导电类型	N – mofuta / Semi-insulating N型导电片/ 半绝缘片	N – mofuta / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2 ( Nitrogen) V ( Vanadium )	N2 ( Nitrogen) V ( Vanadium )
Boitloaelo 晶向	Ka lehlakoreng le leng <0001> Off axis <0001> theoha 4°	Ka lehlakoreng le leng <0001> Off axis <0001> theoha 4°
Ho hanyetsa 电阻率	0.015 ~ 0.03 ohm-cm (4H-N)	0.02 ~ 0.1 ohm-cm (6H-N)
Boima ba Micropipe (MPD) 微管密度	≤10/cm2 ~ ≤1/cm2	≤10/cm2 ~ ≤1/cm2
TTV 总厚度变化	≤ 15 μm	≤ 15 μm
Seqha / Warp 翘曲度	≤25 μm	≤25 μm
Bokaholimo 表面处理	DSP/SSP	DSP/SSP
Kereiti 产品等级	Tlhahiso / Sehlopha sa lipatlisiso	Tlhahiso / Sehlopha sa lipatlisiso
Crystal Stacking Sequence 堆积方式	ABCB	ABCABC
Letlapa la parameter 晶格参数	a=3.076A , c=10.053A	a=3.073A , c=15.117A
Mohlala/eV(Band-gap) 禁带宽度	3.27 eV	3.02 eV
ε(Dielectric Constant) 介电常数	9.6	9.66
Index ea Refraction 折射率	n0 =2.719 ne =2.777	n0 =2.707 , ne =2.755

6H-SiC Silicon Carbide substrate litlhaloso

Ntho项目	Litlhaloso参数
Polytype 晶型	6H-SiC
Diameter 晶圆直径	4 intshi \|6 intshi
Botenya 厚度	350μm ~ 450μm
Boikhantšo 导电类型	N – mofuta / Semi-insulating N型导电片/ 半绝缘片
Dopant 掺杂剂	N2( Nitrogen) V ( Vanadium )
Boitloaelo 晶向	<0001> theoha 4°± 0.5°
Ho hanyetsa 电阻率	0.02 ~ 0.1 ohm-cm (Mofuta oa 6H-N)
Boima ba Micropipe (MPD) 微管密度	≤ 10/cm2
TTV 总厚度变化	≤ 15 μm
Seqha / Warp 翘曲度	≤25 μm
Bokaholimo 表面处理	Sefahleho: CMP, Epi-Ready C Sefahleho: Optical Polish
Kereiti 产品等级	Sehlopha sa lipatlisiso