Silicon Thermal Oxide Wafer

Tlhaloso e Khutšoanyane:

WeiTai Energy Technology Co., Ltd. ke mofani oa thepa ea ka sehloohong ea sebetsanang le li-wafer le lisebelisoa tse tsoetseng pele tsa semiconductor.Re inehetse ho fana ka lihlahisoa tsa boleng bo holimo, tse tšepahalang le tse ncha ho tlhahiso ea semiconductor, indasteri ea photovoltaic le likarolo tse ling tse amanang le tsona.

Mohala oa rona oa lihlahisoa o kenyelletsa lihlahisoa tsa graphite tse koahetsoeng ke SiC / TaC le lihlahisoa tsa ceramic, tse kenyelletsang lisebelisoa tse fapaneng tse kang silicon carbide, silicon nitride, le aluminium oxide joalo-joalo.

Hajoale, ke rona feela moetsi ea fanang ka bohloeki 99.9999% SiC coating le 99.9% recrystallized silicon carbide.Bolelele bo phahameng ba ho roala SiC re ka bo etsa 2640mm.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon Thermal Oxide Wafer

Thermal oxide layer ea silicon wafer ke lera la oxide kapa lesela la silika le entsoeng holim'a lesela le se nang letho la silicon tlas'a maemo a mocheso o phahameng o nang le oxidizing.Thermal oxide layer ea silicon wafer hangata e lengoa ka har'a sebōpi se tšekaletseng, 'me mocheso oa mocheso oa kholo hangata ke 900 ° C ~ 1200 ° C, 'me ho na le mekhoa e' meli ea ho hōla ea "wet oxidation" le "dry oxidation".Thermal oxide layer ke "grown" oxide layer e nang le homogeneity e phahameng le matla a phahameng a dielectric ho feta CVD deposited oxide layer.Thermal oxide layer ke lera le letle la dielectric joalo ka insulator.Lisebelisoa tse ngata tse thehiloeng ho silicon, lera la oxide ea mocheso le phetha karolo ea bohlokoa e le sebaka se thibelang doping le holim'a dielectric.

Malebela: Mofuta oa oxidation

1. Oxidation e omileng

Silicon e arabela ka oksijene, 'me lesela la oxide le leba karolong ea basal.Oxidation e omileng e hloka ho etsoa ka mocheso oa 850 ho isa ho 1200 ° C, mme sekhahla sa kholo se tlase, se ka sebelisoang bakeng sa kholo ea heke ea insulation ea MOS.Ha ho hlokahala lesela la silicon oxide ea boleng bo holimo, ho hlokahala hore ho be le oxidation e omeletseng ho feta ea oxidation e metsi.

Matla a oxidation a omileng: 15nm ~ 300nm(150A ~ 3000A)

2. Oxidation e metsi

Mokhoa ona o sebelisa motsoako oa haedrojene le oksijene e hloekileng haholo ho chesa ~ 1000 ° C, ka hona ho hlahisa mouoane oa metsi ho etsa lera la oxide.Le hoja oxidation e metsi e ke ke ea hlahisa lera la boleng bo phahameng ba oxidation e le oxidation e omeletseng, empa e lekaneng ho sebelisoa e le sebaka sa ho itšehla thajana, ha e bapisoa le oxidation e omileng e na le molemo o hlakileng ke hore e na le sekhahla se phahameng sa ho hōla.

Bokhoni ba oxidation ea metsi: 50nm~ 15µm (500A ~15µm)

3. Mokhoa o omileng - mokhoa o metsi - mokhoa o omileng

Ka mokhoa ona, oksijene e hloekileng e omeletseng e lokolloa ka seboping sa oxidation mohatong oa pele, hydrogen e eketsoa bohareng ba oxidation, 'me hydrogen e bolokoa qetellong ho ntšetsa pele oxidation ka oksijene e hloekileng e omileng ho theha sebopeho se teteaneng sa oxidation ho feta. ts'ebetso e tloaelehileng ea oxidation ea metsi ka mokhoa oa mouoane oa metsi.

4. TEOS oxidation

li-wafers tsa thermal oxide (1)(1)

Mokhoa oa Oxidation
氧化工艺

Oxidation e metsi kapa Oxidation e omileng
湿法氧化/干法氧化

Diameter
硅片直径

2″ / 3″ / 4″ / 6″ / 8″ / 12″
英寸

Botenya ba Oxide
氧化层厚度

100 Å ~ 15µm
10nm ~ 15µm

Mamello
公差范围

+/- 5%

Bokaholimo
表面

Single Side Oxidation(SSO) / Double Sides Oxidation(DSO)
单面氧化/双面氧化

Sebopi
氧化炉类型

Horizontal tube sebōpi
水平管式炉

Khase
气体类型

Khase ea haedrojene le oksijene
氢氧混合气体

Mocheso
氧化温度

900 ℃ ~ 1200 ℃
900 ~ 1200摄氏度

Lenane la refractive
折射率

1.456

Semicera Sebaka sa mosebetsi Sebaka sa mosebetsi sa Semicera 2 Mochini oa lisebelisoa Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD Tshebeletso ya rona


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