GaAs Wafers|GaAs Epi Wafers| Li-substrates tsa Gallium Arsenide

GaAs Wafers|GaAs Epi Wafers| Galllium Arsenide Substrates Featured Image

Tlhaloso e Khutšoanyane:

Semicera Energy Technology Co., Ltd. ke morekisi ea itlhommeng pele ea ipabolang ka li-wafer le lisebelisoa tse tsoetseng pele tsa semiconductor. Re inehetse ho fana ka lihlahisoa tsa boleng bo holimo, tse tšepahalang le tse ncha ho tlhahiso ea semiconductor, indasteri ea photovoltaic le likarolo tse ling tse amanang le tsona.

Mohala oa rona oa lihlahisoa o kenyelletsa lihlahisoa tsa graphite tse koahetsoeng ke SiC / TaC le lihlahisoa tsa ceramic, tse kenyelletsang lisebelisoa tse fapaneng tse kang silicon carbide, silicon nitride, le aluminium oxide joalo-joalo.

Hajoale, ke rona feela moetsi ea fanang ka bohloeki 99.9999% SiC coating le 99.9% recrystallized silicon carbide. Bolelele bo phahameng ba ho roala SiC re ka bo etsa 2640mm.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Li-substrates tsa GaAs li arotsoe ka conductive le semi-insulating, tse sebelisoang haholo ka laser (LD), semiconductor light-emitting diode (LED), near-infrared laser, quantum well-high-power laser le liphanele tsa letsatsi tse sebetsang hantle haholo. HEMT le HBT chips bakeng sa radar, microwave, millimeter wave kapa likhomphutha tsa lebelo le phahameng haholo le puisano ea optical; Lisebelisoa tsa maqhubu a seea-le-moea bakeng sa puisano e se nang mohala, 4G, 5G, puisano ea sathelaete, WLAN.

Haufinyane tjena, li-substrates tsa gallium arsenide le tsona li hatetse pele haholo ho mini-LED, Micro-LED, le LED e khubelu, 'me li sebelisoa haholo lisebelisoa tse aparoang tsa AR/VR.

Diameter 晶片直径	50 limilimithara \| 75 limilimithara \| 100 limilimithara \| 150 limilimithara
Mokhoa oa Kholo 生长方式	LEC液封直拉法 VGF垂直梯度凝固法
Botenya ba Wafer 厚度	350mm ~ 625 um
Boitloaelo 晶向	<100> / <111> / <110> kapa tse ling
Mofuta oa Conductive 导电类型	P – mofuta / N – mofuta / Semi-insulating
Mofuta/Dopant 掺杂剂	Zn / Si / undoped
Boiketlo ba Mojari 载流子浓度	1E17 ~ 5E19 cm-3
Resistivity ho RT 室温电阻率(ohm•cm)	≥1E7 bakeng sa SI
Motsamao 迁移率(cm2/V•Sec)	≥4000
EPD( Etch Pit Density) 腐蚀坑密度	100~1E5
TTV 总厚度变化	≤ 10 um
Seqha / Warp 翘曲度	≤ 20 um
Surface Finish 表面	DSP/SSP
Laser Mark 激光码
Kereiti 等级	Epi polished grade / mechanical grade