Thepa ea semiconductor ea moloko oa boraro haholo-holo e kenyelletsa SiC, GaN, daemane, joalo-joalo, hobane bophara ba lekhalo la sehlopha sa eona (Mohlala) bo boholo ho feta kapa bo lekana le li-volts tsa 2.3 electron (eV), tse tsejoang hape e le lisebelisoa tse pharaletseng tsa lekhalo la semiconductor. Ha ho bapisoa le lisebelisoa tsa semiconductor tsa moloko oa pele le oa bobeli, lisebelisoa tsa semiconductor tsa moloko oa boraro li na le melemo ea ho tsamaisa mocheso o phahameng, motlakase o senyehang haholo, tekanyo e phahameng ea ho falla ha elektronike le matla a phahameng a ho kopanya, a ka finyellang litlhoko tse ncha tsa theknoloji ea morao-rao ea elektroniki bakeng sa boemo bo phahameng. mocheso, matla a phahameng, khatello e phahameng, maqhubu a phahameng le ho hanyetsa mahlaseli le maemo a mang a thata. E na le litebello tsa bohlokoa tsa ts'ebeliso maemong a ts'ireletso ea naha, sefofane, sefofane, tlhahlobo ea oli, polokelo ea mahlo, joalo-joalo, 'me e ka fokotsa tahlehelo ea matla ka ho feta 50% liindastering tse ngata tsa maano tse kang likhokahano tsa Broadband, matla a letsatsi, tlhahiso ea likoloi, mabone a semiconductor, le marang-rang a bohlale, 'me a ka fokotsa bophahamo ba thepa ka ho feta 75%, e leng ntho ea bohlokoahali bakeng sa nts'etsopele ea mahlale a batho le thekenoloji.
Ntho 项目 | GaN-FS-CU-C50 | GaN-FS-CN-C50 | GaN-FS-C-SI-C50 |
Diameter | 50.8 ± 1 limilimithara | ||
Botenya厚度 | 350 ± 25 μm | ||
Boitloaelo | Sefofane sa C (0001) se theohile lehlakoreng la M-axis 0.35 ± 0.15° | ||
Prime Flat | (1-100) 0 ± 0.5 °, 16 ± 1 limilimithara | ||
Sethala sa Bobeli | (11-20) 0 ± 3 °, 8 ± 1 limilimithara | ||
Boikhantšo | N-mofuta | N-mofuta | Semi-insulating |
Resistivity (300K) | <0.1 Ω·cm | <0.05 Ω·cm | > 106 Ω·cm |
TTV | ≤ 15 μm | ||
KOBANE | ≤ 20 μm | ||
Ga Sefahleho Bokatlapahatso | <0.2 nm (e bentšitsoeng); | ||
kapa <0.3 nm (phekola e hloekisitsoeng le e holim'a metsi bakeng sa epitaxy) | |||
N Bokhopo ba Sefahleho | 0.5 ~ 1,5 μm | ||
khetho: 1 ~ 3 nm (mobu o motle); <0.2 nm (e bentšitsoeng) | |||
Dislocation Density | Ho tloha ho 1 x 105 ho isa ho 3 x 106 cm-2 (e baloang ke CL)* | ||
Macro Defect Density | <2cm-2 | ||
Sebaka se Sebeletsang | > 90% (ho qheleloa ka thoko le bokooa bo boholo) | ||
E ka etsoa ho latela litlhoko tsa bareki, sebopeho se fapaneng sa silicon, safire, SiC based GaN epitaxial sheet. |