Li-substrates tsa Gallium Nitride | Li-wafers tsa GaN

Tlhaloso e Khutšoanyane:

Gallium nitride (GaN), joalo ka thepa ea silicon carbide (SiC), ke ea moloko oa boraro oa thepa ea semiconductor e nang le bophara ba lekhalo la band, e nang le lekhalo le leholo la sehlopha, conductivity e phahameng ea mocheso, sekhahla se phahameng sa ho falla ha elektronike, le tšimo e phahameng ea motlakase e senyehang. litšobotsi.Lisebelisoa tsa GaN li na le menyetla e mengata ea ts'ebeliso ka makhetlo a mangata, lebelo le phahameng le masimo a tlhokahalo ea matla a phahameng a kang mabone a pholosang matla a LED, pontšo ea laser projection, likoloi tse ncha tsa matla, marang-rang a bohlale, puisano ea 5G.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Li-wafers tsa GaN

Thepa ea semiconductor ea moloko oa boraro haholo-holo e kenyelletsa SiC, GaN, daemane, joalo-joalo, hobane bophara ba lekhalo la sehlopha sa eona (Mohlala) bo boholo ho feta kapa bo lekana le li-volts tsa 2.3 electron (eV), tse tsejoang hape e le lisebelisoa tse pharaletseng tsa lekhalo la semiconductor. Ha ho bapisoa le lisebelisoa tsa semiconductor tsa moloko oa pele le oa bobeli, lisebelisoa tsa semiconductor tsa moloko oa boraro li na le melemo ea ho tsamaisa mocheso o phahameng, motlakase o senyehang haholo, tekanyo e phahameng ea ho falla ha elektronike le matla a phahameng a ho kopanya, a ka finyellang litlhoko tse ncha tsa theknoloji ea morao-rao ea elektroniki bakeng sa boemo bo phahameng. mocheso, matla a phahameng, khatello e phahameng, maqhubu a phahameng le ho hanyetsa mahlaseli le maemo a mang a thata. E na le litebello tsa bohlokoa tsa ts'ebeliso maemong a ts'ireletso ea naha, sefofane, sefofane, tlhahlobo ea oli, polokelo ea mahlo, joalo-joalo, 'me e ka fokotsa tahlehelo ea matla ka ho feta 50% liindastering tse ngata tsa maano tse kang likhokahano tsa Broadband, matla a letsatsi, tlhahiso ea likoloi, mabone a semiconductor, le marang-rang a bohlale, 'me a ka fokotsa bophahamo ba thepa ka ho feta 75%, e leng ntho ea bohlokoahali bakeng sa nts'etsopele ea mahlale a batho le thekenoloji.

 

Ntho 项目

GaN-FS-CU-C50

GaN-FS-CN-C50

GaN-FS-C-SI-C50

Diameter
晶圆直径

50.8 ± 1 limilimithara

Botenya厚度

350 ± 25 μm

Boitloaelo
晶向

Sefofane sa C (0001) se theohile lehlakoreng la M-axis 0.35 ± 0.15°

Prime Flat
主定位边

(1-100) 0 ± 0.5 °, 16 ± 1 limilimithara

Sethala sa Bobeli
次定位边

(11-20) 0 ± 3 °, 8 ± 1 limilimithara

Boikhantšo
导电性

N-mofuta

N-mofuta

Semi-insulating

Resistivity (300K)
电阻率

<0.1 Ω·cm

<0.05 Ω·cm

> 106 Ω·cm

TTV
平整度

≤ 15 μm

KOBANE
弯曲度

≤ 20 μm

Ga Sefahleho Bokatlapahatso
Ga面粗糙度

<0.2 nm (e bentšitsoeng);

kapa <0.3 nm (phekola e hloekisitsoeng le e holim'a metsi bakeng sa epitaxy)

N Bokhopo ba Sefahleho
N面粗糙度

0.5 ~ 1,5 μm

khetho: 1 ~ 3 nm (mobu o motle); <0.2 nm (e bentšitsoeng)

Dislocation Density
位错密度

Ho tloha ho 1 x 105 ho isa ho 3 x 106 cm-2 (e baloang ke CL)*

Macro Defect Density
缺陷密度

<2cm-2

Sebaka se Sebeletsang
有效面积

> 90% (ho qheleloa ka thoko le bokooa bo boholo)

E ka etsoa ho latela litlhoko tsa bareki, sebopeho se fapaneng sa silicon, safire, SiC based GaN epitaxial sheet.

Semicera Sebaka sa mosebetsi Sebaka sa mosebetsi sa Semicera 2 Mochini oa lisebelisoa Ts'ebetso ea CNN, ho hloekisa lik'hemik'hale, ho roala CVD Tshebeletso ya rona


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